Integrated 9Be+ multi-qubit gate device for the ion-trap quantum computer

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dc.identifier.uri Hahn, H. Zarantonello, G. Schulte, M. Bautista-Salvador, A. Hammerer, K. Ospelkaus, C. 2020-01-31T08:49:01Z 2020-01-31T08:49:01Z 2019
dc.identifier.citation Hahn, H.; Zarantonello, G.; Schulte, M.; Bautista-Salvador, A.; Hammerer, K. et al.: Integrated 9Be+ multi-qubit gate device for the ion-trap quantum computer. In: npj Quantum Information 5 (2019), Nr. 1, 70. DOI:
dc.description.abstract We demonstrate the experimental realization of a two-qubit Mølmer–Sørensen gate on a magnetic field-insensitive hyperfine transition in 9Be+ ions using microwave near-fields emitted by a single microwave conductor embedded in a surface-electrode ion trap. The design of the conductor was optimized to produce a high oscillating magnetic field gradient at the ion position. The measured gate fidelity is determined to be 98.2 ± 1.2% and is limited by technical imperfections, as is confirmed by a comprehensive numerical error analysis. The conductor design can potentially simplify the implementation of multi-qubit gates and represents a self-contained, scalable module for entangling gates within the quantum CCD architecture for an ion-trap quantum computer. eng
dc.language.iso eng
dc.publisher London : Nature Publishing Group
dc.relation.ispartofseries npj Quantum Information 5 (2019), Nr. 1
dc.rights CC BY 4.0 Unported
dc.subject ion-trap quantum computer eng
dc.subject 9Be+ ions eng
dc.subject Quantum Charge-Coupled Device eng
dc.subject.ddc 530 | Physik ger
dc.title Integrated 9Be+ multi-qubit gate device for the ion-trap quantum computer
dc.type Article
dc.type Text
dc.relation.issn 2056-6387
dc.bibliographicCitation.issue 1
dc.bibliographicCitation.volume 5
dc.bibliographicCitation.firstPage 70
dc.description.version publishedVersion
tib.accessRights frei zug�nglich

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