Manipulation of plasmon electron-hole coupling in quasi-free-standing epitaxial graphene layers

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dc.identifier.uri http://dx.doi.org/10.15488/61
dc.identifier.uri http://www.repo.uni-hannover.de/handle/123456789/79
dc.contributor.author Langer, Thomas
dc.contributor.author Pfnür, Herbert
dc.contributor.author Tegenkamp, Christoph
dc.contributor.author Forti, Stiven
dc.contributor.author Emtsev, Konstantin
dc.contributor.author Starke, Ulrich
dc.date.accessioned 2015-10-19T13:43:16Z
dc.date.available 2015-10-19T13:43:16Z
dc.date.issued 2012-10-29
dc.identifier.citation Langer, Thomas; Pfnür, Herbert; Tegenkamp, Christoph; Forti, Stiven; Emtsev, Konstantin; Starke, Ulrich: Manipulation of plasmon electron-hole coupling in quasi-free-standing epitaxial graphene layers. In: New Journal of Physics 14 (2012). DOI: http://dx.doi.org/10.1088/1367-2630/14/10/103045
dc.description.abstract We have investigated the plasmon dispersion in quasi-free-standing monolayer graphene (QFMLG) and epitaxial monolayer graphene (MLG) layers by means of angle resolved electron energy loss spectroscopy. We have shown that various intrinsic p-and n-doping levels in QFMLG and MLG, respectively, do not lead to different overall slopes of the sheet plasmon dispersion, contrary to theoretical predictions. Only the coupling of the plasmon to single particle interband transitions becomes obvious in the plasmon dispersion by characteristic points of inflections, which coincide with the location of the Fermi level above or below the Dirac point. Further evidence is given by thermal treatment of the QFML graphene layer with gradual desorption of intercalated hydrogen, which shifts the chemical potential toward the Dirac point. From a detailed analysis of the plasmon dispersion, we deduce that the interaction strength between the plasmon and the electron-hole pair excitation is increased by about 30% in QFMLG compared to MLG, which is attributed to a modified dielectric environment of the graphene film. eng
dc.description.sponsorship DFG/Graphene/1459
dc.language.iso eng eng
dc.publisher Bristol : IOP Publishing Ltd
dc.relation.ispartofseries New Journal of Physics 14 (2012)
dc.rights CC BY-NC-SA 3.0 Unported
dc.rights.uri http://creativecommons.org/licenses/by-nc-sa/3.0/
dc.subject Siliziumkarbid ger
dc.subject Oberfläche ger
dc.subject Gas ger
dc.subject silicon-carbide eng
dc.subject surfaces eng
dc.subject gas eng
dc.subject.classification Siliciumcarbid ger
dc.subject.classification Oberfläche ger
dc.subject.classification Gas ger
dc.subject.ddc 530 | Physik ger
dc.title Manipulation of plasmon electron-hole coupling in quasi-free-standing epitaxial graphene layers eng
dc.type article
dc.type Text
dc.relation.issn 1367-2630
dc.relation.doi http://dx.doi.org/10.1088/1367-2630/14/10/103045
dc.description.version publishedVersion
tib.accessRights frei zug�nglich


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