Boron-oxygen-related recombination centers in crystalline silicon and the effects of dopant-compensation

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dc.identifier.uri http://dx.doi.org/10.15488/7905
dc.identifier.uri https://www.repo.uni-hannover.de/handle/123456789/7958
dc.contributor.author Lim, Bianca ger
dc.date.accessioned 2019-12-01T14:17:38Z
dc.date.available 2019-12-01T14:17:38Z
dc.date.issued 2012
dc.identifier.citation Lim, Bianca: Boron-oxygen-related recombination centers in crystalline silicon and the effects of dopant-compensation. Hannover : Gottfried Wilhelm Leibniz Universität, Diss., 2012, 131 S. ger
dc.description.abstract [no abstract] ger
dc.language.iso eng eng
dc.publisher Hannover : Gottfried Wilhelm Leibniz Universität Hannover
dc.rights Es gilt deutsches Urheberrecht. Das Dokument darf zum eigenen Gebrauch kostenfrei genutzt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden. ger
dc.subject Compensated silicon eng
dc.subject carrier lifetime eng
dc.subject boron-oxygen defect eng
dc.subject Kompensiertes Silicium ger
dc.subject Ladungsträgerlebensdauer ger
dc.subject Bor-Sauerstoff-Defekt ger
dc.subject.ddc 530 | Physik ger
dc.title Boron-oxygen-related recombination centers in crystalline silicon and the effects of dopant-compensation eng
dc.type doctoralThesis ger
dc.type Text ger
dc.relation.urn urn:nbn:de:gbv:089-68432783X3
dc.description.version publishedVersion ger
tib.accessRights frei zug�nglich ger


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