Boron-oxygen-related recombination centers in crystalline silicon and the effects of dopant-compensation

Original version

Lim, Bianca: Boron-oxygen-related recombination centers in crystalline silicon and the effects of dopant-compensation. Hannover : Gottfried Wilhelm Leibniz Universität, Diss., 2012, 131 S.

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To cite the version in the repository, please use this identifier: https://doi.org/10.15488/7905

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Abstract:
[no abstract]
License of this version: Es gilt deutsches Urheberrecht. Das Dokument darf zum eigenen Gebrauch kostenfrei genutzt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.
Publication type: DoctoralThesis
Publishing status: publishedVersion
Publication date: 2012
Keywords german: Kompensiertes Silicium, Ladungsträgerlebensdauer, Bor-Sauerstoff-Defekt
Keywords english: Compensated silicon, carrier lifetime, boron-oxygen defect
DDC: 530 | Physik

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