Surface state conductivity in epitaxially grown Bi1-xSbx(111) films

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dc.identifier.uri http://dx.doi.org/10.15488/751
dc.identifier.uri http://www.repo.uni-hannover.de/handle/123456789/775
dc.contributor.author Koch, Julian
dc.contributor.author Kröger, Philipp
dc.contributor.author Pfnür, Herbert
dc.contributor.author Tegenkamp, Christoph
dc.date.accessioned 2016-11-29T09:28:11Z
dc.date.available 2016-11-29T09:28:11Z
dc.date.issued 2016
dc.identifier.citation Koch, Julian; Kröger, Philipp; Pfnür, Herbert; Tegenkamp, Christoph: Surface state conductivity in epitaxially grown Bi1-xSbx(111) films. In: New Journal of Physics 18 (2016), Nr. 9, 93012. DOI: http://dx.doi.org/10.1088/1367-2630/18/9/093012
dc.description.abstract Topologically non-trivial surface states were reported first on ${\mathrm{Bi}}_{1-x}$Sb x bulk crystals. In this study we present transport measurements performed on thin ${\mathrm{Bi}}_{1-x}$Sb x -films (up to 24 nm thickness) grown epitaxially on Si(111) with various Sb-concentrations (up to x = 0.22). The analysis of the temperature dependency allowed us to distinguish between different transport channels originating from surface and bulk bands as well as impurity states. At temperatures below 30 K the transport is mediated by surface states while at higher temperatures activated transport via bulk channels sets in. The surface state conductivity and bulk band gaps can be tuned by the Sb-concentration and film thickness, respectively. For films as thin as 4 nm the surface state transport is strongly suppressed in contrast to Bi(111) films grown under identical conditions. The impurity channel is of intrinsic origin due to the growth and alloy formation process and turns out to be located at the buried interface. eng
dc.description.sponsorship DFG
dc.language.iso eng
dc.publisher Bristol : Institute of Physics Publishing
dc.relation.ispartofseries New Journal of Physics 18 (2016), Nr. 9
dc.rights CC BY 3.0
dc.rights.uri http://creativecommons.org/licenses/by/3.0/
dc.subject surface transport eng
dc.subject thin films eng
dc.subject topological insulator eng
dc.subject Crystal impurities eng
dc.subject Energy gap eng
dc.subject Surface states eng
dc.subject Buried interface eng
dc.subject Epitaxially grown eng
dc.subject Identical conditions eng
dc.subject Impurity channels eng
dc.subject Surface transport eng
dc.subject Temperature dependencies eng
dc.subject Topological insulators eng
dc.subject Transport channel eng
dc.subject Thin films eng
dc.subject.ddc 530 | Physik ger
dc.title Surface state conductivity in epitaxially grown Bi1-xSbx(111) films
dc.type article
dc.type Text
dc.relation.issn 1367-2630
dc.relation.doi http://dx.doi.org/10.1088/1367-2630/18/9/093012
dc.bibliographicCitation.issue 9
dc.bibliographicCitation.volume 18
dc.bibliographicCitation.firstPage 93012
dc.description.version publishedVersion
tib.accessRights frei zug�nglich


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