Ernst, Marco; Schulte-Huxel, Henning; Niepelt, Raphael; Kajari-Schröder, Sarah; Brendel, Rolf
(Amsterdam : Elsevier, 2013)
We separate a (34 ± 2) μm-thick macroporous Si layer from an n-type Si wafer by means of electrochemical etching. The porosity is p = (26.2 ± 2.4)%. We use ion implantation to selectively dope the outer surfaces of the ...