Auflistung Fakultät für Mathematik und Physik nach Schlagwort "Aluminum"

Auflistung Fakultät für Mathematik und Physik nach Schlagwort "Aluminum"

Sortiert nach: Sortierung: Ergebnisse:

  • Advances in the surface passivation of silicon solar cells 
    Schmidt, Jan; Werner, Florian; Veith, Boris; Zielke, Dimitri; Steingrube, S.; Altermatt, Pietro P.; Gatz, Sebastian; Dullweber, Thorsten; Brendel, Rolf (Amsterdam : Elsevier BV, 2012)
    The surface passivation properties of aluminium oxide (Al 2O 3) on crystalline Si are compared with the traditional passivation system of silicon nitride (SiN x). It is shown that Al 2O 3 has fundamental advantages over ...
  • Analysis of local Al-doped back surface fields for high efficiency screen-printed solar cells 
    Gatz, Sebastian; Bothe, Karsten; Müller, Jens; Dullweber, Thorsten; Brendel, Rolf (Amsterdam : Elsevier BV, 2011)
    In this paper, we investigate the surface recombination of local screen-printed aluminum contacts applied to rear passivated solar cells. We measure the surface recombination velocity by microwave-detected photoconductance ...
  • Comparison of the thermal stability of single Al2O3 layers and Al2O3/SiNx stacks for the surface passiviation of silicon 
    Veith, Boris; Werner, Florian; Zielke, Dimitri; Brendel, Rolf; Schmidt, Jan (Amsterdam : Elsevier BV, 2011)
    We measure surface recombination velocities (SRVs) below 10 cm/s on low-resistivity (1.4 Ωcm) p-type crystalline silicon wafers passivated with plasma-assisted and thermal atomic layer deposited (ALD) aluminium oxide (Al2O3) ...
  • Formation of locally aluminum-doped p-type silicon regions by in-line high-rate evaporation 
    Mader, Christoph; Bock, Robert; Müller, Jens; Schmidt, Jan; Brendel, Rolf (Amsterdam : Elsevier BV, 2011)
    Locally aluminum-doped p-type silicon regions are formed by in-line high-rate evaporation of aluminum. We deposit aluminum layers of 28 μm thickness at dynamic deposition rates of 20 μm×m/min on locally laser-ablated Al2O3 ...
  • High-rate atomic layer deposition of Al2O3 for the surface passivation of Si solar cells 
    Werner, Florian; Stals, Walter; Görtzen, Roger; Veith, Boris; Brendel, Rolf; Schmidt, Jan (Amsterdam : Elsevier BV, 2011)
    High-rate spatial atomic layer deposition (ALD) enables an industrially relevant deposition of high-quality aluminum oxide (Al2O3) films for the surface passivation of silicon solar cells. We demonstrate a homogeneous ...
  • Kerfless exfoliated thin crystalline Si wafers with Al metallization layers for solar cells 
    Niepelt, Raphael; Hensen, Jan; Steckenreiter, Verena; Brendel, Rolf; Kajari-Schröder, Sarah (Cambridge : Cambridge University Press, 2015)
    We report on a kerfless exfoliation approach to further reduce the costs of crystalline silicon photovoltaics making use of evaporated Al as a double functional layer. The Al serves as the stress inducing element to drive ...
  • Layer selective laser ablation for local contacts to thin emitters 
    Haase, Felix; Rojas, Enrique Garralaga; Bothe, Karsten; Brendel, Rolf (Amsterdam : Elsevier BV, 2011)
    High efficiency solar cells require high generation and low recombination rates. High bulk lifetime, well passivated surfaces, and lowly doped thin emitters allow for low recombination rates. Thin passivated emitters should ...
  • Multiple scale modeling of Al2O3 thin film growth in an ion beam sputtering process 
    Turowski, Marcus; Jupé, Marco; Melzig, Thomas; Pflug, Andreas; Ristau, Detlev (Bellingham, WA : S P I E - International Society for Optical Engineering, 2015)
    A multiple scale model approach is presented in order to investigate Al2O3 thin film growth in the framework of an existing Ion Beam Sputtering (IBS) coating process. Therefore, several simulation techniques are combined ...
  • On the Discrepancy in Simultaneous Observations of the Structure Parameter of Temperature Using Scintillometers and Unmanned Aircraft 
    Braam, Miranda; Beyrich, Frank; Bange, Jens; Platis, Andreas; Martin, Sabrina; Maronga, Björn; Moene, Arnold F. (Dordrecht : Springer Netherlands, 2016)
    We elaborate on the preliminary results presented in Beyrich et al. (in Boundary-Layer Meteorol 144:83–112, 2012), who compared the structure parameter of temperature (C2T) obtained with the unmanned meteorological mini ...
  • Recombination at local aluminum-alloyed silicon solar cell base contacts by dynamic infrared lifetime mapping 
    Müller, Jens; Bothe, Karsten; Gatz, Sebastian; Plagwitz, Heiko; Schubert, Gunnar; Brendel, Rolf (Amsterdam : Elsevier BV, 2011)
    The application of local aluminum (Al)-alloyed contacts to the p-type base of silicon solar cells reduces minority charge carrier recombination due to the formation of a local back surface field (LBSF). We study the ...
  • Simultaneous Contacting and Interconnection of Passivated Emitter and Rear Solar Cells 
    Schulte-Huxel, Henning; Petermann, Jan-Hendrik; Blankemeyer, Susanne; Steckenreiter, Verena; Kajari-Schröder, Sarah; Brendel, Rolf (London : Elsevier Ltd., 2016)
    The back end process of passivated emitter and rear cells (PERC) consists of at least one laser process and three screen-printing steps followed by the stringing and tabbing of the cells. To reduce the number of steps we ...
  • Solar cell emitter design with PV-tailored implantation 
    Ohrdes, Tobias; Steingrube, S.; Wagner, Hannes; Zechner, C.; Letay, G.; Chen, R.; Dunham, S.T.; Altermatt, Pietro P. (Amsterdam : Elsevier BV, 2011)
    A potentially cost-effective ion implanter for solar cells has become commercially available very recently. As the emitter dopant profiles differ from the standard diffusions, a combination of process simulation and device ...
  • Thermomechanical Spalling of Epitaxially Grown Silicon from Porosified Substrates 
    Steckenreiter, Verena; Hensen, Jan; Knorr, Alwina; Niepelt, Raphael; Brendel, Rolf; Kajari-Schröder, Sarah (London : Elsevier Ltd., 2016)
    We combine two kerfless approaches to unite advantages of both processes: the epitaxial layer transfer based on porous silicon (PSI process) and the lift-off of a thin silicon layer from a substrate via controlled spalling ...
  • Towards a transportable aluminium ion quantum logic optical clock 
    Hannig, Stephan; Pelzer, L.; Scharnhorst, N.; Kramer, J.; Stepanova, M.; Xu, Z.T.; Spethmann, N.; Leroux, I.D.; Mehlstäubler, Tanja E.; Schmidt, Piet O. (American Institute of Physics : [S.l.], 2019)
    With the advent of optical clocks featuring fractional frequency uncertainties on the order of 10-17 and below, new applications such as chronometric leveling with few-centimeter height resolution emerge. We are developing ...

Suche im Repositorium


Durchblättern

Mein Nutzer/innenkonto

Nutzungsstatistiken