Two-qubit microwave quantum logic gate with 9Be+ ions in scalable surface-electrode ion traps

Zur Kurzanzeige

dc.identifier.uri http://dx.doi.org/10.15488/5128
dc.identifier.uri https://www.repo.uni-hannover.de/handle/123456789/5174
dc.contributor.author Hahn, Henning ger
dc.date.accessioned 2019-07-18T12:01:41Z
dc.date.available 2019-07-18T12:01:41Z
dc.date.issued 2019
dc.identifier.citation Hahn, Henning: Two-qubit microwave quantum logic gate with 9Be+ ions in scalable surface-electrode ion traps. Hannover : Gottfried Wilhelm Leibniz Universität, Diss., 2019, x, 152 S. DOI: https://doi.org/10.15488/5128 ger
dc.description.abstract Towards the goal of a large-scale quantum computer based on trapped ions, near-field microwaves represent a promising approach to perform the techni- cally challenging key operation of a two-qubit entangling gate. In this thesis we present the first microwave-driven two-qubit gate in 9Be+ ions employing a first-order field-independent qubit transition and a scalable surface-electrode ion trap at room temperature. We test the quality of the gate operation by producing a maximally entangled state and measuring the resulting state preparation fidelity in a reduced tomography procedure. For the best two- qubit gate achieved in the system we find this fidelity to be F = 98.2 ± 1.2 %. Following a comprehensive error analysis based on numerical simulations and experimentally determined input parameters, we identify current infidelity con- tributions of the apparatus. Here, the natural error source of the microwave near-field approach, namely fluctuating AC Zeeman shifts, could be reduced to the 10^−4 level due to the optimized design of the employed microwave con- ductor. As we find that the three largest errors can all be reduced upon purely technical improvements, higher fidelities are feasible in the future. Besides the gate realization, the thesis also comprises the initial characterization of the employed ion trap as well as the design and construction of a Raman laser at ∼ 313 nm which is utilized to perform near ground state cooling of radial modes of a single- and two-ion crystal. Here, ensuing heating rate measure- ments on a single-ion’s radial modes show good agreement with the electric- field noise spectral density expected from literature given the chosen mode frequency and nearest ion-to-electrode distance of 70 µm. Finally, we present the operation of a first multi-layer ion trap whose electrode layout features a 3-dimensional microwave conductor intended for performing microwave-driven two-qubit gates. Following a characterization of the resulting near-field pat- tern using a single ion as a local field probe, we find the multi-layer conductor to have significantly better field properties when compared to an equivalent single-layer design. Given these promising results, future work will focus on the integration of similar microwave circuitry in a multi-zone trap array as envisioned by the QCCD architecture. ger
dc.language.iso eng ger
dc.publisher Hannover : Institutionelles Repositorium der Leibniz Universität Hannover
dc.rights Es gilt deutsches Urheberrecht. Das Dokument darf zum eigenen Gebrauch kostenfrei genutzt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden. ger
dc.subject trapped ions eng
dc.subject quantum information processing eng
dc.subject near-field microwaves eng
dc.subject two-qubit gates eng
dc.subject Gefangene Ionen ger
dc.subject Quanteninformationsverarbeitung ger
dc.subject Nahfeld-Mikrowellen ger
dc.subject Zwei-Qubit Gatter ger
dc.subject.ddc 530 | Physik ger
dc.title Two-qubit microwave quantum logic gate with 9Be+ ions in scalable surface-electrode ion traps eng
dc.type DoctoralThesis ger
dc.type Text ger
dcterms.extent x, 152 S.
dc.description.version publishedVersion ger
tib.accessRights frei zug�nglich ger


Die Publikation erscheint in Sammlung(en):

Zur Kurzanzeige

 

Suche im Repositorium


Durchblättern

Mein Nutzer/innenkonto

Nutzungsstatistiken