Berry phase transition in twisted bilayer graphene

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dc.identifier.uri Rode, Johannes C. Smirnov, Dmitri Schmidt, Hennrik Haug, Rolf J. 2019-05-16T13:32:40Z 2019-05-16T13:32:40Z 2016
dc.identifier.citation Rode, J. C.; Smirnov, D.; Schmidt, H. Haug, R. J.: Berry phase transition in twisted bilayer graphene. In: 2D Materials 3 (2016), Nr. 3, 035005. DOI:
dc.description.abstract The electronic dispersion of a graphene bilayer is highly dependent on rotational mismatch between layers and can be further manipulated by electrical gating. This allows for an unprecedented control over electronic properties and opens up the possibility of flexible band structure engineering. Here we present novel magnetotransport data in a twisted bilayer, crossing the energetic border between decoupled monolayers and coupled bilayer. In addition a transition in Berry phase between pi and 2 pi is observed at intermediate magnetic fields. Analysis of Fermi velocities and gate induced charge carrier densities suggests an important role of strong layer asymmetry for the observed phenomena. eng
dc.language.iso eng
dc.publisher Bristol : Institute of Physics Publishing IOP
dc.relation.ispartofseries 2D Materials 3 (2016), Nr. 3
dc.rights CC BY 3.0 Unported
dc.subject Dirac Fermions eng
dc.subject Superlattics eng
dc.subject Layers eng
dc.subject.ddc 530 | Physik ger
dc.title Berry phase transition in twisted bilayer graphene eng
dc.type Article
dc.type Text
dc.relation.essn 2053-1583
dc.bibliographicCitation.issue 3
dc.bibliographicCitation.volume 3
dc.description.version publishedVersion
tib.accessRights frei zug�nglich

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