NIR-CW-laser annealing of room temperature sputtered ZnO:Al

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dc.identifier.uri Schütz, V. Sittinger, V. Götzendörfer, S. Kalmbach, C.C. Fu, R. Von Witzendorff, P. Britze, C. Suttmann, O. Overmeyer, Ludger 2019-03-28T10:21:31Z 2019-03-28T10:21:31Z 2014
dc.identifier.citation Schütz, V.; Sittinger, V.; Götzendörfer, S.; Kalmbach, C.C.; Fu, R. et al.: NIR-CW-laser annealing of room temperature sputtered ZnO:Al. In: Physics Procedia 56 (2014), S. 1073-1082. DOI:
dc.description.abstract Transparent Conducting Oxides (TCOs) are widespread as transparent electrodes in thin film photovoltaics and electronics. Post deposition furnace annealing improves the electrical and optical properties of TCOs. Disadvantages of furnace annealing are large energy consumption and long processing time due to long-lasting heating ramps. ZnO:Al thin films (AZO) with a low electrical resistivity and high transparency are usually sputtered at substrate temperatures up to several hundred °C. In this study post deposition near infrared (NIR) continuous wave (CW) laser annealing of room-temperature deposited AZO thin films is investigated. The surface temperature is determined by infrared thermography. The averaged transmittance is increased by T 300-1100 nm ≤ 7.2 % due to a lower absorptance at a constant reflectance. The resistivity is reduced to ρ = 360 μΩcm, because of a higher electron mobility μ. These promising results show the potential of laser annealing for the replacement of furnace annealing in industrial applications. eng
dc.language.iso eng
dc.publisher Amsterdam : Elsevier B.V.
dc.relation.ispartofseries Physics Procedia 56 (2014), Nr. C
dc.rights CC BY-NC-ND 3.0 Unported
dc.subject Electro-optical parameters eng
dc.subject Laser-annealing eng
dc.subject TCO eng
dc.subject.classification Konferenzschrift ger
dc.subject.ddc 530 | Physik ger
dc.title NIR-CW-laser annealing of room temperature sputtered ZnO:Al
dc.type Article
dc.type Text
dc.relation.issn 1875-3884
dc.bibliographicCitation.volume 56
dc.bibliographicCitation.firstPage 1073
dc.bibliographicCitation.lastPage 1082
dc.description.version publishedVersion
tib.accessRights frei zug�nglich

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    Frei zugängliche Publikationen aus An-Instituten der Leibniz Universität Hannover

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