NIR-CW-laser annealing of room temperature sputtered ZnO:Al

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dc.identifier.uri http://dx.doi.org/10.15488/4637
dc.identifier.uri https://www.repo.uni-hannover.de/handle/123456789/4679
dc.contributor.author Schütz, V.
dc.contributor.author Sittinger, V.
dc.contributor.author Götzendörfer, S.
dc.contributor.author Kalmbach, C.C.
dc.contributor.author Fu, R.
dc.contributor.author Von Witzendorff, P.
dc.contributor.author Britze, C.
dc.contributor.author Suttmann, O.
dc.contributor.author Overmeyer, Ludger
dc.date.accessioned 2019-03-28T10:21:31Z
dc.date.available 2019-03-28T10:21:31Z
dc.date.issued 2014
dc.identifier.citation Schütz, V.; Sittinger, V.; Götzendörfer, S.; Kalmbach, C.C.; Fu, R. et al.: NIR-CW-laser annealing of room temperature sputtered ZnO:Al. In: Physics Procedia 56 (2014), S. 1073-1082. DOI: https://doi.org/10.1016/j.phpro.2014.08.020
dc.description.abstract Transparent Conducting Oxides (TCOs) are widespread as transparent electrodes in thin film photovoltaics and electronics. Post deposition furnace annealing improves the electrical and optical properties of TCOs. Disadvantages of furnace annealing are large energy consumption and long processing time due to long-lasting heating ramps. ZnO:Al thin films (AZO) with a low electrical resistivity and high transparency are usually sputtered at substrate temperatures up to several hundred °C. In this study post deposition near infrared (NIR) continuous wave (CW) laser annealing of room-temperature deposited AZO thin films is investigated. The surface temperature is determined by infrared thermography. The averaged transmittance is increased by T 300-1100 nm ≤ 7.2 % due to a lower absorptance at a constant reflectance. The resistivity is reduced to ρ = 360 μΩcm, because of a higher electron mobility μ. These promising results show the potential of laser annealing for the replacement of furnace annealing in industrial applications. eng
dc.language.iso eng
dc.publisher Amsterdam : Elsevier B.V.
dc.relation.ispartof International Conference on Laser Assisted Net Shape Engineering, LANE 2014, September 8-11, 2014, Fürth, Germany
dc.relation.ispartofseries Physics Procedia 56 (2014), Nr. C
dc.rights CC BY-NC-ND 3.0 Unported
dc.rights.uri https://creativecommons.org/licenses/by-nc-nd/3.0/
dc.subject Electro-optical parameters eng
dc.subject Laser-annealing eng
dc.subject TCO eng
dc.subject.ddc 530 | Physik ger
dc.title NIR-CW-laser annealing of room temperature sputtered ZnO:Al
dc.type article
dc.type conferenceObject
dc.type Text
dc.relation.issn 1875-3884
dc.relation.doi https://doi.org/10.1016/j.phpro.2014.08.020
dc.bibliographicCitation.volume 56
dc.bibliographicCitation.firstPage 1073
dc.bibliographicCitation.lastPage 1082
dc.description.version publishedVersion
tib.accessRights frei zug�nglich


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    Frei zugängliche Publikationen aus An-Instituten der Leibniz Universität Hannover

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