The effect of oxide precipitates on minority carrier lifetime in n-type silicon

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dc.identifier.uri http://dx.doi.org/10.15488/4504
dc.identifier.uri https://www.repo.uni-hannover.de/handle/123456789/4544
dc.contributor.author Murphy, J.D.
dc.contributor.author Al-Amin, M.
dc.contributor.author Bothe, K.
dc.contributor.author Olmo, M.
dc.contributor.author Voronkov, V.V.
dc.contributor.author Falster, R.J.
dc.date.accessioned 2019-03-06T10:08:27Z
dc.date.available 2019-03-06T10:08:27Z
dc.date.issued 2015
dc.identifier.citation Murphy, J.D.; Al-Amin, M.; Bothe, K.; Olmo, M.; Voronkov, V.V. et al.: The effect of oxide precipitates on minority carrier lifetime in n-type silicon. In: Journal of Applied Physics 118 (2015), Nr. 21, 215706. DOI: https://doi.org/10.1063/1.4936852
dc.description.abstract Supersaturated levels of interstitial oxygen in Czochralski silicon can lead to the formation of oxide precipitates. Although beneficial from an internal gettering perspective, oxygen-related extended defects give rise to recombination which reduces minority carrier lifetime. The highest efficiency silicon solar cells are made from n-type substrates in which oxide precipitates can have a detrimental impact on cell efficiency. In order to quantify and to understand the mechanism of recombination in such materials, we correlate injection level-dependent minority carrier lifetime data measured with silicon nitride surface passivation with interstitial oxygen loss and precipitate concentration measurements in samples processed under substantially different conditions. We account for surface recombination, doping level, and precipitate morphology to present a generalised parameterisation of lifetime. The lifetime data are analysed in terms of recombination activity which is dependent on precipitate density or on the surface area of different morphologies of precipitates. Correlation of the lifetime data with interstitial oxygen loss data shows that the recombination activity is likely to be dependent on the precipitate surface area. We generalise our findings to estimate the impact of oxide precipitates with a given surface area on lifetime in both n-type and p-type silicon. eng
dc.language.iso eng
dc.publisher College Park, MD : American Institute of Physics
dc.relation.ispartofseries Journal of Applied Physics 118 (2015), Nr. 21
dc.rights CC BY 3.0 Unported
dc.rights.uri https://creativecommons.org/licenses/by/3.0/
dc.subject Carrier concentration eng
dc.subject Efficiency eng
dc.subject Oxygen eng
dc.subject Precipitates eng
dc.subject Semiconducting silicon eng
dc.subject Silicon eng
dc.subject Silicon nitride eng
dc.subject Silicon solar cells eng
dc.subject Concentration Measurement eng
dc.subject Czochralski silicon eng
dc.subject Internal gettering eng
dc.subject Interstitial oxygen eng
dc.subject Minority carrier lifetimes eng
dc.subject Precipitate morphology eng
dc.subject Recombination activity eng
dc.subject Surface recombinations eng
dc.subject Carrier lifetime eng
dc.subject.ddc 530 | Physik ger
dc.title The effect of oxide precipitates on minority carrier lifetime in n-type silicon
dc.type article
dc.type Text
dc.relation.issn 0021-8979
dc.relation.doi https://doi.org/10.1063/1.4936852
dc.bibliographicCitation.issue 21
dc.bibliographicCitation.volume 118
dc.bibliographicCitation.firstPage 215706
dc.description.version publishedVersion
tib.accessRights frei zug�nglich


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    Frei zugängliche Publikationen aus An-Instituten der Leibniz Universität Hannover

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