Hierarchical Etching for Improved Optical Front-side Properties of Monocrystalline Si Solar Cells

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dc.identifier.uri http://dx.doi.org/10.15488/4482
dc.identifier.uri https://www.repo.uni-hannover.de/handle/123456789/4522
dc.contributor.author Heinemeyer, Frank
dc.contributor.author Steckenreiter, Verena
dc.contributor.author Kiefer, Fabian
dc.contributor.author Peibst, Robby
dc.date.accessioned 2019-03-06T09:34:02Z
dc.date.available 2019-03-06T09:34:02Z
dc.date.issued 2015
dc.identifier.citation Heinemeyer, F.; Steckenreiter, V.; Kiefer, F.; Peibst, R.: Hierarchical Etching for Improved Optical Front-side Properties of Monocrystalline Si Solar Cells. In: Energy Procedia 77 (2015), S. 810-815. DOI: https://doi.org/10.1016/j.egypro.2015.07.114
dc.description.abstract We investigate a hierarchical surface structuring process to reduce the optical reflectance of monocrystalline Si solar cells to below the reflectance of state-of-the-art alkaline texturing. First, alkaline texturing is performed, yielding random pyramids with a few micrometers in size. Second, plasma etching forms step-shaped structures smaller than the wavelength of visible light. Eventually, the surface morphology is formed by <111> planes with many steps, edges and inverted pyramids in a few hundreds of nanometers scale. We investigate the reflectance on double-side textured samples with SiNx/Al2O3 front-side and SiNx rear-side passivation. These dielectric stacks exhibit a low reflectance for conventional alkaline textured surfaces. The short circuit current density potential of the best hierarchical structured samples is 0.4 mA/cm2 higher when integrating the AM1.5G spectrum from 300nm to 1000 nm. Furthermore, our results suggest that structures with dimensions smaller than the thickness of an antireflection- and passivation (AR) layer cannot be covered conformal by the AR layer when using plasma-enhanced chemical vapor deposition. Thus, there seems to be a lower limit for the structure size, and wet chemical cleaning sequences – performed after plasma etching - have to be adjusted accordingly. eng
dc.language.iso eng
dc.publisher London : Elsevier Ltd.
dc.relation.ispartofseries Energy Procedia 77 (2015)
dc.rights CC BY-NC-ND 4.0 Unported
dc.rights.uri https://creativecommons.org/licenses/by-nc-nd/4.0/
dc.subject plasma etching eng
dc.subject solar cell eng
dc.subject texture eng
dc.subject Alkalinity eng
dc.subject Chemical cleaning eng
dc.subject Monocrystalline silicon eng
dc.subject Passivation eng
dc.subject Plasma CVD eng
dc.subject Plasma enhanced chemical vapor deposition eng
dc.subject Plasma etching eng
dc.subject Reflection eng
dc.subject Silicon nitride eng
dc.subject Solar cells eng
dc.subject Textures eng
dc.subject Alkaline texturing eng
dc.subject Anti-reflection eng
dc.subject Dielectric stack eng
dc.subject Hierarchical surfaces eng
dc.subject Optical reflectance eng
dc.subject Shaped structures eng
dc.subject State of the art eng
dc.subject Textured surface eng
dc.subject Silicon solar cells eng
dc.subject.classification Konferenzschrift ger
dc.subject.ddc 620 | Ingenieurwissenschaften und Maschinenbau ger
dc.title Hierarchical Etching for Improved Optical Front-side Properties of Monocrystalline Si Solar Cells
dc.type Article
dc.type Text
dc.relation.issn 1876-6102
dc.relation.doi https://doi.org/10.1016/j.egypro.2015.07.114
dc.bibliographicCitation.volume 77
dc.bibliographicCitation.firstPage 810
dc.bibliographicCitation.lastPage 815
dc.description.version publishedVersion
tib.accessRights frei zug�nglich

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