In-circuit-measurement of parasitic elements in high gain high bandwidth low noise transimpedance amplifiers

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dc.identifier.uri http://dx.doi.org/10.15488/4415
dc.identifier.uri https://www.repo.uni-hannover.de/handle/123456789/4455
dc.contributor.author Cochems, Philipp ger
dc.contributor.author Kirk, Ansgar T. ger
dc.contributor.author Zimmermann, Stefan ger
dc.date.accessioned 2019-01-25T11:04:37Z
dc.date.available 2019-01-25T11:04:37Z
dc.date.issued 2014
dc.identifier.citation Cochems, P.; Kirk, A.T.; Zimmermann, S.: In-circuit-measurement of parasitic elements in high gain high bandwidth low noise transimpedance amplifiers. In: Review of Scientific Instruments 85 (2014), 124703. DOI: https://doi.org/10.1063/1.4902854 ger
dc.description.abstract Parasitic elements play an important role in the development of every high performance circuit. In the case of high gain, high bandwidth transimpedance amplifiers, the most important parasitic elements are parasitic capacitances at the input and in the feedback path, which significantly influence the stability, the frequency response, and the noise of the amplifier. As these parasitic capacitances range from a few picofarads down to only a few femtofarads, it is nearly impossible to measure them accurately using traditional LCR meters. Unfortunately, they also cannot be easily determined from the transfer function of the transimpedance amplifier, as it contains several overlapping effects and its measurement is only possible when the circuit is already stable. Therefore, we developed an in-circuit measurement method utilizing minimal modifications to the input stage in order to measure its parasitic capacitances directly and with unconditional stability. Furthermore, using the data acquired with this measurement technique, we both proposed a model for the complicated frequency response of high value thick film resistors as they are used in high gain transimpedance amplifiers and optimized our transimpedance amplifier design. ger
dc.language.iso eng ger
dc.publisher College Park, MA : American Institute of Physics (AIP)
dc.relation.ispartofseries Review of Scientific Instruments 85 (2014) ger
dc.rights Es gilt deutsches Urheberrecht. Das Dokument darf zum eigenen Gebrauch kostenfrei genutzt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden. ger
dc.subject Operational amplifier eng
dc.subject Transistors eng
dc.subject Measuring instruments eng
dc.subject Alloys eng
dc.subject Transimpedance amplifiers eng
dc.subject Analog circuits eng
dc.subject Laboratory equipment eng
dc.subject Parasitic capacitance eng
dc.subject Oscilloscopes eng
dc.subject Signal generators eng
dc.subject.ddc 621,3 | Elektrotechnik, Elektronik ger
dc.title In-circuit-measurement of parasitic elements in high gain high bandwidth low noise transimpedance amplifiers ger
dc.type article ger
dc.type Text ger
dc.relation.doi 10.1063/1.4902854
dc.description.version publishedVersion ger
tib.accessRights frei zug�nglich ger


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