Shot noise in self-assembled InAS quantum dots

Abstract

We investigate the noise properties of a GaAs-AlAs-GaAs tunneling structure with embedded self-assembled InAs quantum dots in the single-electron tunneling regime. We analyze the dependence of the relative noise amplitude of the shot noise on bias voltage. We observe a nonmonotonic behavior of the Fanofactor α with an average value of α≈0.8 consistent with the asymmetry of the tunneling barriers. Reproducible fluctuations observed in α can be attributed to the successive participation of more and more InAs quantum dots in the tunneling current.