Nauen, A.; Hapke-Wurst, I.; Hohls, F.; Zeitler, U.; Haug, R.J.; Pierz, K.: Shot noise in self-assembled InAS quantum dots. In: Physical Review B 66 (2002), Nr. 16, 161303. DOI:
https://doi.org/10.1103/PhysRevB.66.161303
Abstract: |
We investigate the noise properties of a GaAs-AlAs-GaAs tunneling structure with embedded self-assembled InAs quantum dots in the single-electron tunneling regime. We analyze the dependence of the relative noise amplitude of the shot noise on bias voltage. We observe a nonmonotonic behavior of the Fanofactor α with an average value of α≈0.8 consistent with the asymmetry of the tunneling barriers. Reproducible fluctuations observed in α can be attributed to the successive participation of more and more InAs quantum dots in the tunneling current.
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License of this version: |
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Publication type: |
Article |
Publishing status: |
publishedVersion |
Publication date: |
2002 |
Keywords english: |
arsenic, indium, amplifier, article, diode, electric current, electric potential, electron, elementary particle, energy, noise, quantum mechanics, reproducibility
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DDC: |
530 | Physik
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