dc.identifier.uri |
http://dx.doi.org/10.15488/2837 |
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dc.identifier.uri |
http://www.repo.uni-hannover.de/handle/123456789/2863 |
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dc.contributor.author |
Schmidt, H.
|
|
dc.contributor.author |
Lüdtke, T.
|
|
dc.contributor.author |
Barthold, P.
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dc.contributor.author |
McCann, E.
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|
dc.contributor.author |
Fal'Ko, V.I.
|
|
dc.contributor.author |
Haug, Rolf J.
|
|
dc.date.accessioned |
2018-02-23T10:08:41Z |
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dc.date.available |
2018-02-23T10:08:41Z |
|
dc.date.issued |
2008 |
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dc.identifier.citation |
Schmidt, H.; Lüdtke, T.; Barthold, P.; McCann, E.; Fal'Ko, V.I.; Haug, R.J.: Tunable graphene system with two decoupled monolayers. In: Applied Physics Letters 93 (2008), Nr. 17, 172108. DOI: https://doi.org/10.1063/1.3012369 |
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dc.description.abstract |
The use of two truly two-dimensional gapless semiconductors, monolayer and bilayer graphene, as current-carrying components in field-effect transistors (FETs) gives access to special types of nanoelectronic devices. Here, we report on the development of graphene-based FETs containing two decoupled graphene monolayers manufactured from a single one folded during the exfoliation process. The transport characteristics of these devices differ markedly from those manufactured from a single-crystal bilayer. By analyzing Shubnikov-de Haas oscillations, we demonstrate the possibility to independently control the carrier densities in both layers using top and bottom gates, despite there being only a nanometer scale separation between them. © 2008 American Institute of Physics. |
eng |
dc.language.iso |
eng |
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dc.publisher |
College Park, MD : American Institute of Physics |
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dc.relation.ispartofseries |
Applied Physics Letters 93 (2008), Nr. 17 |
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dc.rights |
Es gilt deutsches Urheberrecht. Das Dokument darf zum eigenen Gebrauch kostenfrei genutzt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden. |
|
dc.subject |
Electron energy levels |
eng |
dc.subject |
Joints (structural components) |
eng |
dc.subject |
MESFET devices |
eng |
dc.subject |
Monolayers |
eng |
dc.subject |
Transistors |
eng |
dc.subject |
Bi layers |
eng |
dc.subject |
Bilayer graphene |
eng |
dc.subject |
Bottom gates |
eng |
dc.subject |
Carrier densities |
eng |
dc.subject |
Exfoliation processes |
eng |
dc.subject |
Graphene |
eng |
dc.subject |
In fields |
eng |
dc.subject |
Nanoelectronic devices |
eng |
dc.subject |
Nanometer scales |
eng |
dc.subject |
Semi-conductors |
eng |
dc.subject |
Transport characteristics |
eng |
dc.subject |
Field effect transistors |
eng |
dc.subject.ddc |
530 | Physik
|
ger |
dc.title |
Tunable graphene system with two decoupled monolayers |
eng |
dc.type |
Article |
|
dc.type |
Text |
|
dc.relation.issn |
00036951 |
|
dc.relation.doi |
https://doi.org/10.1063/1.3012369 |
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dc.bibliographicCitation.issue |
17 |
|
dc.bibliographicCitation.volume |
93 |
|
dc.bibliographicCitation.firstPage |
172108 |
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dc.description.version |
publishedVersion |
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tib.accessRights |
frei zug�nglich |
|