Schmidt, H.; Lüdtke, T.; Barthold, P.; McCann, E.; Fal'Ko, V.I.; Haug, R.J.: Tunable graphene system with two decoupled monolayers. In: Applied Physics Letters 93 (2008), Nr. 17, 172108. DOI:
https://doi.org/10.1063/1.3012369
Zusammenfassung: |
The use of two truly two-dimensional gapless semiconductors, monolayer and bilayer graphene, as current-carrying components in field-effect transistors (FETs) gives access to special types of nanoelectronic devices. Here, we report on the development of graphene-based FETs containing two decoupled graphene monolayers manufactured from a single one folded during the exfoliation process. The transport characteristics of these devices differ markedly from those manufactured from a single-crystal bilayer. By analyzing Shubnikov-de Haas oscillations, we demonstrate the possibility to independently control the carrier densities in both layers using top and bottom gates, despite there being only a nanometer scale separation between them. © 2008 American Institute of Physics.
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Lizenzbestimmungen: |
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Publikationstyp: |
Article |
Publikationsstatus: |
publishedVersion |
Erstveröffentlichung: |
2008 |
Schlagwörter (englisch): |
Electron energy levels, Joints (structural components), MESFET devices, Monolayers, Transistors, Bi layers, Bilayer graphene, Bottom gates, Carrier densities, Exfoliation processes, Graphene, In fields, Nanoelectronic devices, Nanometer scales, Semi-conductors, Transport characteristics, Field effect transistors
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Fachliche Zuordnung (DDC): |
530 | Physik
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