Tuning the onset voltage of resonant tunneling through InAs quantum dots by growth parameters

Zur Kurzanzeige

dc.identifier.uri http://dx.doi.org/10.15488/2830
dc.identifier.uri http://www.repo.uni-hannover.de/handle/123456789/2856
dc.contributor.author Hapke-Wurst, I.
dc.contributor.author Zeitler, U.
dc.contributor.author Keyser, U.F.
dc.contributor.author Haug, Rolf J.
dc.contributor.author Pierz, Klaus
dc.contributor.author Ma, Z.
dc.date.accessioned 2018-02-23T10:08:38Z
dc.date.available 2018-02-23T10:08:38Z
dc.date.issued 2003
dc.identifier.citation Hapke-Wurst, I.; Zeitler, U.; Keyser, U.F.; Haug, R.J.; Pierz, K.; Ma, Z.: Tuning the onset voltage of resonant tunneling through InAs quantum dots by growth parameters. In: Applied Physics Letters 82 (2003), Nr. 8, S. 1209-1211. DOI: https://doi.org/10.1063/1.1555712
dc.description.abstract A study was conducted on the onset voltage of resonant tunneling through indium arsenide (InAs) quantum dots by growth parameters. It was found that the onset voltage of the first step decreased from 200 mV to 0 with increasing InAs coverage. The results were confirmed by atomic force micrographs and photoluminescence experiments on reference samples. eng
dc.language.iso eng
dc.publisher College Park, MD : American Institute of Physics
dc.relation.ispartofseries Applied Physics Letters 82 (2003), Nr. 8
dc.rights Es gilt deutsches Urheberrecht. Das Dokument darf zum eigenen Gebrauch kostenfrei genutzt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.
dc.subject Atomic force microscopy eng
dc.subject Current voltage characteristics eng
dc.subject Ground state eng
dc.subject Molecular beam epitaxy eng
dc.subject Photoluminescence eng
dc.subject Resonant tunneling eng
dc.subject Self assembly eng
dc.subject Semiconducting indium compounds eng
dc.subject Onset voltage eng
dc.subject Semiconductor quantum dots eng
dc.subject.ddc 530 | Physik ger
dc.title Tuning the onset voltage of resonant tunneling through InAs quantum dots by growth parameters eng
dc.type Article
dc.type Text
dc.relation.issn 00036951
dc.relation.doi https://doi.org/10.1063/1.1555712
dc.bibliographicCitation.issue 8
dc.bibliographicCitation.volume 82
dc.bibliographicCitation.firstPage 1209
dc.bibliographicCitation.lastPage 1211
dc.description.version publishedVersion
tib.accessRights frei zug�nglich


Thumbnail
Name: Hapke-Wurst et al ...
Größe: 176.3Kb
Format: PDF
Öffnen

Die Publikation erscheint in Sammlung(en):

Zur Kurzanzeige

 

Suche im Repositorium


Durchblättern

Mein Nutzer/innenkonto

Nutzungsstatistiken