Tuning the onset voltage of resonant tunneling through InAs quantum dots by growth parameters

Hapke-Wurst, I.; Zeitler, U.; Keyser, U.F.; Haug, Rolf J.; Pierz, Klaus; Ma, Z.

Original version

Hapke-Wurst, I.; Zeitler, U.; Keyser, U.F.; Haug, R.J.; Pierz, K.; Ma, Z.: Tuning the onset voltage of resonant tunneling through InAs quantum dots by growth parameters. In: Applied Physics Letters 82 (2003), Nr. 8, S. 1209-1211. DOI: https://doi.org/10.1063/1.1555712

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To cite the version in the repository, please use this identifier: https://doi.org/10.15488/2830

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Abstract:
A study was conducted on the onset voltage of resonant tunneling through indium arsenide (InAs) quantum dots by growth parameters. It was found that the onset voltage of the first step decreased from 200 mV to 0 with increasing InAs coverage. The results were confirmed by atomic force micrographs and photoluminescence experiments on reference samples.
License of this version:	Es gilt deutsches Urheberrecht. Das Dokument darf zum eigenen Gebrauch kostenfrei genutzt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.
Publication type:	Article
Publishing status:	publishedVersion
Publication date:	2003
Keywords english:	Atomic force microscopy, Current voltage characteristics, Ground state, Molecular beam epitaxy, Photoluminescence, Resonant tunneling, Self assembly, Semiconducting indium compounds, Onset voltage, Semiconductor quantum dots
DDC:	530 \| Physik