Fabrication of a single-electron transistor by current-controlled local oxidation of a two-dimensional electron system

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dc.identifier.uri http://dx.doi.org/10.15488/2827
dc.identifier.uri http://www.repo.uni-hannover.de/handle/123456789/2853
dc.contributor.author Keyser, U.F.
dc.contributor.author Schumacher, Hans W.
dc.contributor.author Zeitler, U.
dc.contributor.author Haug, Rolf J.
dc.contributor.author Eberl, K.
dc.date.accessioned 2018-02-23T10:08:37Z
dc.date.available 2018-02-23T10:08:37Z
dc.date.issued 2000
dc.identifier.citation Keyser, U.F.; Schumacher, H.W.; Zeitler, U.; Haug, R.J.; Eberl, K.: Fabrication of a single-electron transistor by current-controlled local oxidation of a two-dimensional electron system. In: Applied Physics Letters 76 (2000), Nr. 4, S. 457-459. DOI: https://doi.org/10.1063/1.125786
dc.description.abstract The surface layers of a GaAs/AlGaAs heterostructure are locally oxidized using an atomic force microscope. The local anodic oxidation depletes the underlying two-dimensional electron gas leading to the formation of tunneling barriers. The height of the barriers is determined by measuring the thermally activated current. By varying the oxidation current, the barrier heights can be tuned between a few meV and more than 100 meV. Using these barriers as tunneling elements, a side gated single-electron transistor is fabricated. © 2000 American Institute of Physics. eng
dc.language.iso eng
dc.publisher College Park, MD : American Institute of Physics
dc.relation.ispartofseries Applied Physics Letters 76 (2000), Nr. 4
dc.rights Es gilt deutsches Urheberrecht. Das Dokument darf zum eigenen Gebrauch kostenfrei genutzt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.
dc.subject.ddc 530 | Physik ger
dc.title Fabrication of a single-electron transistor by current-controlled local oxidation of a two-dimensional electron system
dc.type article
dc.type Text
dc.relation.issn 00036951
dc.relation.doi https://doi.org/10.1063/1.125786
dc.bibliographicCitation.issue 4
dc.bibliographicCitation.volume 76
dc.bibliographicCitation.firstPage 457
dc.bibliographicCitation.lastPage 459
dc.description.version publishedVersion
tib.accessRights frei zug�nglich


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