Shot noise in tunneling through a single InAs quantum dot

Abstract

We examine the dynamical properties of resonant tunneling through single InAs quantum dots by measuring the shot noise of the current. We observe an approximately linear voltage dependence of both the shot noise, characterized by the Fano factor, and the tunneling current itself. We ascribe this to the three-dimensional density of states of the emitter and collector and are able to model the voltage dependence using a master equation approach. © 2005 American Institute of Physics.