dc.identifier.uri |
http://dx.doi.org/10.15488/2816 |
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dc.identifier.uri |
http://www.repo.uni-hannover.de/handle/123456789/2842 |
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dc.contributor.author |
Wilde, M.A.
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dc.contributor.author |
Rhode, M.
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|
dc.contributor.author |
Heyn, C.
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dc.contributor.author |
Schäffler, F.
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dc.contributor.author |
Zeitler, U.
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dc.contributor.author |
Haug, Rolf J.
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dc.contributor.author |
Heitmann, D.
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dc.contributor.author |
Grundler, D.
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dc.date.accessioned |
2018-02-23T09:41:27Z |
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dc.date.available |
2018-02-23T09:41:27Z |
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dc.date.issued |
2005 |
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dc.identifier.citation |
Wilde, M.A.; Rhode, M.; Heyn, Ch.; Schäffler, F.; Zeitler, U. et al.: Magnetization of modulation doped Si/SiGe quantum wells in high magnetic fields. In: AIP Conference Proceedings 772 (2005), S. 467-468. DOI: https://doi.org/10.1063/1.1994186 |
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dc.description.abstract |
We have fabricated highly sensitive micromechanical cantilever magnetometers and, by this means, investigated the de Haas-van Alphen effect of a two-dimensional electron system in a modulation-doped Si/SiGe heterostructure. As a function of perpendicular magnetic field component B⊥ we observe at low temperature sawtooth-like oscillations of the magnetization M. These are found at even integer filling factors v = ns/(eB ⊥/h) = 4(N + 1) with N = 0, 1, 2..., when the chemical potential is in the Landau energy gap, and at v = (4N + 2) where the spin splitting of the Landau levels occurs. In particular, we also observe oscillations at odd v where the valley degeneracy is lifted. This signal increases significantly with B⊥. We discuss our findings in the framework of electron-electron interaction in the presence of disorder. © 2005 American Institute of Physics. |
eng |
dc.language.iso |
eng |
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dc.publisher |
College Park, MD : American Institute of Physics |
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dc.relation.ispartofseries |
AIP Conference Proceedings 772 (2005) |
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dc.rights |
Es gilt deutsches Urheberrecht. Das Dokument darf zum eigenen Gebrauch kostenfrei genutzt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden. |
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dc.subject |
de Haas-van Alphen effect |
eng |
dc.subject |
2DES |
eng |
dc.subject.classification |
Konferenzschrift |
ger |
dc.subject.ddc |
530 | Physik
|
ger |
dc.title |
Magnetization of modulation doped Si/SiGe quantum wells in high magnetic fields |
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dc.type |
Article |
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dc.type |
Text |
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dc.relation.issn |
0094243X |
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dc.relation.doi |
https://doi.org/10.1063/1.1994186 |
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dc.bibliographicCitation.volume |
772 |
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dc.bibliographicCitation.firstPage |
467 |
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dc.bibliographicCitation.lastPage |
468 |
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dc.description.version |
publishedVersion |
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tib.accessRights |
frei zug�nglich |
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