Magnetization of modulation doped Si/SiGe quantum wells in high magnetic fields

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dc.identifier.uri http://dx.doi.org/10.15488/2816
dc.identifier.uri http://www.repo.uni-hannover.de/handle/123456789/2842
dc.contributor.author Wilde, M.A.
dc.contributor.author Rhode, M.
dc.contributor.author Heyn, C.
dc.contributor.author Schäffler, F.
dc.contributor.author Zeitler, U.
dc.contributor.author Haug, Rolf J.
dc.contributor.author Heitmann, D.
dc.contributor.author Grundler, D.
dc.date.accessioned 2018-02-23T09:41:27Z
dc.date.available 2018-02-23T09:41:27Z
dc.date.issued 2005
dc.identifier.citation Wilde, M.A.; Rhode, M.; Heyn, Ch.; Schäffler, F.; Zeitler, U. et al.: Magnetization of modulation doped Si/SiGe quantum wells in high magnetic fields. In: AIP Conference Proceedings 772 (2005), S. 467-468. DOI: https://doi.org/10.1063/1.1994186
dc.description.abstract We have fabricated highly sensitive micromechanical cantilever magnetometers and, by this means, investigated the de Haas-van Alphen effect of a two-dimensional electron system in a modulation-doped Si/SiGe heterostructure. As a function of perpendicular magnetic field component B⊥ we observe at low temperature sawtooth-like oscillations of the magnetization M. These are found at even integer filling factors v = ns/(eB ⊥/h) = 4(N + 1) with N = 0, 1, 2..., when the chemical potential is in the Landau energy gap, and at v = (4N + 2) where the spin splitting of the Landau levels occurs. In particular, we also observe oscillations at odd v where the valley degeneracy is lifted. This signal increases significantly with B⊥. We discuss our findings in the framework of electron-electron interaction in the presence of disorder. © 2005 American Institute of Physics. eng
dc.language.iso eng
dc.publisher College Park, MD : American Institute of Physics
dc.relation.ispartofseries AIP Conference Proceedings 772 (2005)
dc.rights Es gilt deutsches Urheberrecht. Das Dokument darf zum eigenen Gebrauch kostenfrei genutzt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.
dc.subject de Haas-van Alphen effect eng
dc.subject 2DES eng
dc.subject.ddc 530 | Physik ger
dc.title Magnetization of modulation doped Si/SiGe quantum wells in high magnetic fields
dc.type article
dc.type conferenceObject
dc.type Text
dc.relation.issn 0094243X
dc.relation.doi https://doi.org/10.1063/1.1994186
dc.bibliographicCitation.volume 772
dc.bibliographicCitation.firstPage 467
dc.bibliographicCitation.lastPage 468
dc.description.version publishedVersion
tib.accessRights frei zug�nglich


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