Roughness and stability of silicon on insulator surfaces

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dc.identifier.uri http://dx.doi.org/10.15488/2764
dc.identifier.uri http://www.repo.uni-hannover.de/handle/123456789/2790
dc.contributor.author Czubanowski, M.
dc.contributor.author Tegenkamp, Christoph
dc.contributor.author Ernst, W.
dc.contributor.author Pfnür, Herbert
dc.date.accessioned 2018-02-19T13:57:50Z
dc.date.available 2018-02-19T13:57:50Z
dc.date.issued 2004
dc.identifier.citation Czubanowski, M.; Tegenkamp, C.; Ernst, W.; Pfnür, H.: Roughness and stability of silicon on insulator surfaces. In: Applied Physics Letters 84 (2004), Nr. 3, S. 350-352. DOI: https://doi.org/10.1063/1.1641181
dc.description.abstract The feasibility of low temperature processes (below 800°C), to obtain atomically clean and smooth surfaces on (100) oriented silicon on insulator material (SOI) with negligible variation of the top Si film thickness was tested. These processes were characterized by using low-energy electron diffraction (LEED) and atomic force microscopy (AFM) supplemented by conductivity measurements. The evaporation of Si at 750°C at a flux of 0.15 ML/min, the most promising method for obtaining atomically smooth and continuous SOI films was also described. It was shown that at the inner Si/SiO2 interface the formation of volatile SiO was a fast process at temperatures around 1000°C. eng
dc.language.iso eng
dc.publisher College Park, MD : American Institute of Physics
dc.relation.ispartofseries Applied Physics Letters 84 (2004), Nr. 3
dc.rights Es gilt deutsches Urheberrecht. Das Dokument darf zum eigenen Gebrauch kostenfrei genutzt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.
dc.subject Atomic force microscopy eng
dc.subject Crystal defects eng
dc.subject Evaporation eng
dc.subject Fermi level eng
dc.subject Heterojunctions eng
dc.subject Interfaces (materials) eng
dc.subject Low energy electron diffraction eng
dc.subject Mathematical models eng
dc.subject Schottky barrier diodes eng
dc.subject Silica eng
dc.subject Surface roughness eng
dc.subject Degree of metastability eng
dc.subject Electron bombardment eng
dc.subject Silicon on insulator technology eng
dc.subject.ddc 530 | Physik ger
dc.title Roughness and stability of silicon on insulator surfaces
dc.type article
dc.type Text
dc.relation.issn 00036951
dc.relation.doi https://doi.org/10.1063/1.1641181
dc.bibliographicCitation.issue 3
dc.bibliographicCitation.volume 84
dc.bibliographicCitation.firstPage 350
dc.bibliographicCitation.lastPage 352
dc.description.version publishedVersion
tib.accessRights frei zug�nglich


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