Kerfless exfoliated thin crystalline Si wafers with Al metallization layers for solar cells

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dc.identifier.uri http://dx.doi.org/10.15488/2326
dc.identifier.uri http://www.repo.uni-hannover.de/handle/123456789/2352
dc.contributor.author Niepelt, Raphael
dc.contributor.author Hensen, Jan
dc.contributor.author Steckenreiter, Verena
dc.contributor.author Brendel, Rolf
dc.contributor.author Kajari-Schröder, Sarah
dc.date.accessioned 2017-11-17T09:49:36Z
dc.date.available 2017-11-17T09:49:36Z
dc.date.issued 2015
dc.identifier.citation Niepelt, R.; Hensen, J.; Steckenreiter, V.; Brendel, R.; Kajari-Schröder, S.: Kerfless exfoliated thin crystalline Si wafers with Al metallization layers for solar cells. In: Journal of Materials Research 30 (2015), Nr. 21, S. 3227-3240. DOI: https://doi.org/10.1557/jmr.2015.309
dc.description.abstract We report on a kerfless exfoliation approach to further reduce the costs of crystalline silicon photovoltaics making use of evaporated Al as a double functional layer. The Al serves as the stress inducing element to drive the exfoliation process and can be maintained as a rear contacting layer in the solar cell after exfoliation. The 50-70 μm thick exfoliated Si layers show effective minority carrier lifetimes around 180 μs with diffusion lengths of 10 times the layer thickness. We analyze the thermo-mechanical properties of the Al layer by x-ray diffraction analysis and investigate its influence on the exfoliation process. We evaluate the approach for the implementation into solar cell production by determining processing limits and estimating cost advantages of a possible solar cell design route. The Al-Si bilayers are mechanically stable under processing conditions and exhibit a moderate cost savings potential of 3-36% compared to other c-Si cell concepts. © Materials Research Society 2015. eng
dc.language.iso eng
dc.publisher Cambridge : Cambridge University Press
dc.relation.ispartofseries Journal of Materials Research 30 (2015), Nr. 21
dc.rights Es gilt deutsches Urheberrecht. Das Dokument darf zum eigenen Gebrauch kostenfrei genutzt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden. Dieser Beitrag ist aufgrund einer (DFG-geförderten) Allianz- bzw. Nationallizenz frei zugänglich.
dc.subject Si eng
dc.subject thermal stresses eng
dc.subject x-ray diffraction (XRD) eng
dc.subject Aluminum eng
dc.subject Biomechanics eng
dc.subject Costs eng
dc.subject Crystalline materials eng
dc.subject Silicon eng
dc.subject Silicon solar cells eng
dc.subject Silicon wafers eng
dc.subject Thermal stress eng
dc.subject X ray diffraction eng
dc.subject X ray diffraction analysis eng
dc.subject Crystalline Si wafers eng
dc.subject Crystalline silicons eng
dc.subject Exfoliation process eng
dc.subject Mechanically stable eng
dc.subject Minority carrier lifetimes eng
dc.subject Processing condition eng
dc.subject Solar cell design eng
dc.subject Thermomechanical properties eng
dc.subject Solar cells eng
dc.subject.ddc 620 | Ingenieurwissenschaften und Maschinenbau ger
dc.title Kerfless exfoliated thin crystalline Si wafers with Al metallization layers for solar cells
dc.type Article
dc.type Text
dc.relation.issn 0884-2914
dc.relation.doi https://doi.org/10.1557/jmr.2015.309
dc.bibliographicCitation.issue 21
dc.bibliographicCitation.volume 30
dc.bibliographicCitation.firstPage 3227
dc.bibliographicCitation.lastPage 3240
dc.description.version publishedVersion
tib.accessRights frei zug�nglich


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