Fundamental consideration of junction formation strategies for phosphorus-doped emitters with J0e < 10 fA/cm2

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dc.identifier.uri http://dx.doi.org/10.15488/2220
dc.identifier.uri http://www.repo.uni-hannover.de/handle/123456789/2245
dc.contributor.author Min, Byungsul
dc.contributor.author Krügener, Jan
dc.contributor.author Müller, Matthias
dc.contributor.author Bothe, Karsten
dc.contributor.author Brendel, Rolf
dc.date.accessioned 2017-11-09T08:00:02Z
dc.date.available 2017-11-09T08:00:02Z
dc.date.issued 2017
dc.identifier.citation Min, B.; Krügener, J.; Müller, M.; Bothe, K.; Brendel, R.: Fundamental consideration of junction formation strategies for phosphorus-doped emitters with J0e < 10 fA/cm2. In: Energy Procedia 124 (2017), S. 126-130. DOI: https://doi.org/10.1016/j.egypro.2017.09.323
dc.description.abstract This work shows the potential of further optimization of phosphorus-doped emitters in p-type silicon solar cells. We investigate the impact of different combinations of phosphorus doping profiles and surface passivation qualities on the saturation current density J0e by considering boundary conditions based on published experimental data. Our simulation study shows that there are two possible ways to achieve J0e values below 10 fA/cm2. One is the reduction of the electrically active phosphorus concentration nsurf at the surface beneath 2×1019 cm-3 and simultaneously reducing the surface recombination velocity Sp to below 103 cm/s. The other contrarily increases nsurf to values of up to 1×1021 cm-3 while ensuring full activation of all phosphorus dopants. In the latter case, J0e values below 10 fA/cm2 seem possible, even for Sp = 107 cm/s which is equal to the thermal velocity. eng
dc.language.iso eng
dc.publisher London : Elsevier Ltd.
dc.relation.ispartof 7th International Conference on Silicon Photovoltaics, SiliconPV 2017, April 03-05, 2017, Freiburg, Germany.
dc.relation.ispartofseries Energy Procedia 124 (2017)
dc.rights CC BY-NC-ND 4.0
dc.rights.uri https://creativecommons.org/licenses/by-nc-nd/4.0/
dc.subject emitter eng
dc.subject junction formation eng
dc.subject passivation eng
dc.subject recombination eng
dc.subject Doping (additives) eng
dc.subject Passivation eng
dc.subject Silicon eng
dc.subject Silicon solar cells eng
dc.subject Electrically actives eng
dc.subject emitter eng
dc.subject Junction formation eng
dc.subject Phosphorus concentration eng
dc.subject recombination eng
dc.subject Saturation current densities eng
dc.subject Surface passivation eng
dc.subject Surface recombination velocities eng
dc.subject Phosphorus eng
dc.subject.ddc 333,7 | Natürliche Ressourcen, Energie und Umwelt ger
dc.title Fundamental consideration of junction formation strategies for phosphorus-doped emitters with J0e < 10 fA/cm2
dc.type article
dc.type Text
dc.relation.issn 1876-6102
dc.relation.doi https://doi.org/10.1016/j.egypro.2017.09.323
dc.bibliographicCitation.volume 124
dc.bibliographicCitation.firstPage 126
dc.bibliographicCitation.lastPage 130
dc.description.version publishedVersion
tib.accessRights frei zug�nglich


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