dc.identifier.uri |
http://dx.doi.org/10.15488/2219 |
|
dc.identifier.uri |
http://www.repo.uni-hannover.de/handle/123456789/2244 |
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dc.contributor.author |
Gogolin, Ralf
|
|
dc.contributor.author |
Zielke, D.
|
|
dc.contributor.author |
Descoeudres, A.
|
|
dc.contributor.author |
Despeisse, M.
|
|
dc.contributor.author |
Ballif, C.
|
|
dc.contributor.author |
Schmidt, J.
|
|
dc.date.accessioned |
2017-11-09T08:00:01Z |
|
dc.date.available |
2017-11-09T08:00:01Z |
|
dc.date.issued |
2017 |
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dc.identifier.citation |
Gogolin, R.; Zielke, D.; Descoeudres, A.; Despeisse, M.; Ballif, C.; Schmidt, J.: Demonstrating the high Voc potential of PEDOT:PSS/c-Si heterojunctions on solar cells. In: Energy Procedia 124 (2017), S. 593-597. DOI: https://doi.org/10.1016/j.egypro.2017.09.295 |
|
dc.description.abstract |
In this study, we demonstrate the high surface passivation quality of PEDOT:PSS/c-Si junctions for the first time on solar cell level, reaching a record high Voc value of 688 mV after full-area metallization of the PEDOT:PSS. We achieve this by combining the PEDOT:PSS hole-selective layer at the rear of the crystalline silicon wafer with a well-passivating electron-selective a-Si:H(i/n) layer stack at the front. Our results clearly prove the excellent hole selectivity of PEDOT:PSS on crystalline silicon. © 2017 The Authors. Published by Elsevier Ltd. |
eng |
dc.language.iso |
eng |
|
dc.publisher |
London : Elsevier Ltd. |
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dc.relation.ispartofseries |
Energy Procedia 124 (2017) |
|
dc.rights |
CC BY-NC-ND 4.0 Unported |
|
dc.rights.uri |
https://creativecommons.org/licenses/by-nc-nd/4.0/ |
|
dc.subject |
heterojunctions |
eng |
dc.subject |
PEDOT:PSS |
eng |
dc.subject |
solar cells |
eng |
dc.subject |
Voc potential |
eng |
dc.subject |
Crystalline materials |
eng |
dc.subject |
Heterojunctions |
eng |
dc.subject |
Passivation |
eng |
dc.subject |
Silicon |
eng |
dc.subject |
Silicon solar cells |
eng |
dc.subject |
Silicon wafers |
eng |
dc.subject |
Solar cells |
eng |
dc.subject |
a-Si:H |
eng |
dc.subject |
Crystalline silicon wafers |
eng |
dc.subject |
Crystalline silicons |
eng |
dc.subject |
Hole selective layers |
eng |
dc.subject |
Layer stacks |
eng |
dc.subject |
PEDOT:PSS |
eng |
dc.subject |
Surface passivation |
eng |
dc.subject |
Conducting polymers |
eng |
dc.subject.ddc |
333,7 | Natürliche Ressourcen, Energie und Umwelt
|
ger |
dc.title |
Demonstrating the high Voc potential of PEDOT:PSS/c-Si heterojunctions on solar cells |
eng |
dc.type |
Article |
|
dc.type |
Text |
|
dc.relation.issn |
1876-6102 |
|
dc.relation.doi |
https://doi.org/10.1016/j.egypro.2017.09.295 |
|
dc.bibliographicCitation.volume |
124 |
|
dc.bibliographicCitation.firstPage |
593 |
|
dc.bibliographicCitation.lastPage |
597 |
|
dc.description.version |
publishedVersion |
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tib.accessRights |
frei zug�nglich |
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