Towards bose-einstein condensation of semiconductor excitons: The biexciton polarization effect

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Hägele, D.; Pfalz, S.; Oestreich, M.: Towards bose-einstein condensation of semiconductor excitons: The biexciton polarization effect. In: Physical Review Letters 103 (2009), Nr. 14, No. 146402. DOI: https://doi.org/10.1103/PhysRevLett.103.146402

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To cite the version in the repository, please use this identifier: https://doi.org/10.15488/2084

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Abstract:
We theoretically predict a strong influence of stimulated exciton-exciton scattering on semiconductor luminescence. The stimulated scattering causes circularly polarized instead of unpolarized emission at the biexciton emission line in a degenerate gas of partly spin polarized excitons. The biexciton polarization effect increases with increasing exciton densities and decreasing temperatures and approaches almost unity in the ultimate case of Bose-Einstein condensation. Time- and polarization-resolved luminescence measurements evidence the biexciton polarization effect both in ZnSe and GaAs quantum wells. © 2009 The American Physical Society.
License of this version: Es gilt deutsches Urheberrecht. Das Dokument darf zum eigenen Gebrauch kostenfrei genutzt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.
Publication type: Article
Publishing status: publishedVersion
Publication date: 2009
Keywords english: Biexciton, Biexciton emission, Circularly polarized, Exciton density, Exciton-exciton scattering, GaAs quantum wells, Luminescence measurements, Polarization effect, Spin-polarized excitons, Stimulated scattering, Bose-Einstein condensation, Condensation, Fermi level, Leakage (fluid), Luminescence, Polarization, Excitons
DDC: 530 | Physik

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