Electron-spin relaxation in bulk GaAs for doping densities close to the metal-to-insulator transition

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dc.identifier.uri http://dx.doi.org/10.15488/2083
dc.identifier.uri http://www.repo.uni-hannover.de/handle/123456789/2108
dc.contributor.author Römer, M.
dc.contributor.author Bernien, H.
dc.contributor.author Müller, G.
dc.contributor.author Schuh, D.
dc.contributor.author Hübner, Jens
dc.contributor.author Oestreich, Michael
dc.date.accessioned 2017-10-20T13:44:32Z
dc.date.available 2017-10-20T13:44:32Z
dc.date.issued 2010
dc.identifier.citation Römer, M.; Bernien, H.; Müller, G.; Schuh, D.; Hübner, J.; Oestreich, M.: Electron-spin relaxation in bulk GaAs for doping densities close to the metal-to-insulator transition. In: Physical Review B - Condensed Matter and Materials Physics 81 (2010), Nr. 7, No. 75216. DOI: https://doi.org/10.1103/PhysRevB.81.075216
dc.description.abstract We have measured the electron-spin-relaxation rate and the integrated spin noise power in n-doped GaAs for temperatures between 4 and 80 K and for doping concentrations ranging from 2.7×1015 to 8.8×1016 cm−3 using spin noise spectroscopy. The temperature-dependent measurements show a clear transition from localized to free electrons for the lower doped samples and confirm mainly free electrons at all temperatures for the highest doped sample. While the sample at the metal-to-insulator transition shows the longest spin-relaxation time at low temperatures, a clear crossing of the spin-relaxation rates is observed at 70 K and the highest doped sample reveals the longest spin-relaxation time above 70 K. © 2010 The American Physical Society. eng
dc.language.iso eng
dc.publisher College Park, MD : American Physical Society
dc.relation.ispartofseries Physical Review B 81 (2010), Nr. 7
dc.rights Es gilt deutsches Urheberrecht. Das Dokument darf zum eigenen Gebrauch kostenfrei genutzt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.
dc.subject.ddc 530 | Physik ger
dc.title Electron-spin relaxation in bulk GaAs for doping densities close to the metal-to-insulator transition
dc.type article
dc.type Text
dc.relation.issn 10980121
dc.relation.doi https://doi.org/10.1103/PhysRevB.81.075216
dc.bibliographicCitation.issue 7
dc.bibliographicCitation.volume 81
dc.bibliographicCitation.firstPage 75216
dc.description.version publishedVersion
tib.accessRights frei zug�nglich


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