dc.identifier.uri |
http://dx.doi.org/10.15488/2079 |
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dc.identifier.uri |
http://www.repo.uni-hannover.de/handle/123456789/2104 |
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dc.contributor.author |
English, D.J.
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dc.contributor.author |
Lagoudakis, P.G.
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dc.contributor.author |
Harley, R.T.
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dc.contributor.author |
Eldridge, P.S.
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dc.contributor.author |
Hübner, Jens
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dc.contributor.author |
Oestreich, Michael
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dc.date.accessioned |
2017-10-20T13:44:30Z |
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dc.date.available |
2017-10-20T13:44:30Z |
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dc.date.issued |
2011 |
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dc.identifier.citation |
English, D.J.; Lagoudakis, P.G.; Harley, R.T.; Eldridge, P.S.; Hübner, J.; Oestreich, M.: Strain-induced spin relaxation anisotropy in symmetric (001)-oriented GaAs quantum wells. In: Physical Review B - Condensed Matter and Materials Physics 84 (2011), Nr. 15, No. 155323. DOI: https://doi.org/10.1103/PhysRevB.84.155323 |
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dc.description.abstract |
We show experimentally, using spin quantum beat spectroscopy, that strain applied to an undoped symmetric (001) GaAs/AlGaAs multiple quantum well causes an in-plane anisotropy of the spin-relaxation rate Γs, but leaves the electron Landé g factor isotropic. The spin-relaxation-rate anisotropy gives a direct measure of the bulk inversion asymmetry and the strain contributions to the conduction-band spin splitting. The comparison of the measured strain-splitting coefficient C3 for the quantum well with the value for bulk GaAs suggests a dependence on electron quantum confinement. The isotropic g factor implies a symmetric conduction electron wave function, whereas the anisotropic spin-relaxation rate requires a nonzero expectation value of the valence-band potential gradient on the conduction-band states. Therefore, the experiment suggests that strain generates an effective valence-band potential gradient, while the conduction-band potential remains symmetrical to a good approximation. © 2011 American Physical Society. |
eng |
dc.language.iso |
eng |
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dc.publisher |
College Park, MD : American Physical Society |
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dc.relation.ispartofseries |
Physical Review B 84 (2011), Nr. 15 |
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dc.rights |
Es gilt deutsches Urheberrecht. Das Dokument darf zum eigenen Gebrauch kostenfrei genutzt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden. |
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dc.subject.ddc |
530 | Physik
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ger |
dc.title |
Strain-induced spin relaxation anisotropy in symmetric (001)-oriented GaAs quantum wells |
eng |
dc.type |
Article |
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dc.type |
Text |
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dc.relation.issn |
10980121 |
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dc.relation.doi |
https://doi.org/10.1103/PhysRevB.84.155323 |
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dc.bibliographicCitation.issue |
15 |
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dc.bibliographicCitation.volume |
84 |
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dc.bibliographicCitation.firstPage |
155323 |
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dc.description.version |
publishedVersion |
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tib.accessRights |
frei zug�nglich |
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