The rise of spin noise spectroscopy in semiconductors: From acoustic to GHz frequencies

Abstract

This article gives an overview on the advance of spin noise spectroscopy (SNS) in semiconductors in the past 8 years from the first measurements in bulk n-GaAs [Oestreich et al., Phys. Rev. Lett. 95, 216603 (2005)] up to the recent achievement of optical detection of the intrinsic spin fluctuations of a single hole confined in an individual self-assembled quantum dot [Dahbashi et al., arXiv:1306.3183 (2013)]. We discuss the general technical implementation of optical SNS and the invaluable profit of the introduction of real-time fast Fourier transform analysis into the data acquisition. By now, the full spin dynamic from the milli- to picosecond timescales can be addressed by SNS and the technique quickly strides ahead to enable real quantum non-demolition measurements in semiconductors. Spin noise spectra recorded in 2005 in bulk n-GaAs with approximately 109 electron spins (Oestreich et al.) and 2013 (Dahbashi et al.) for a single hole spin. The integration time for the latter is more than a factor of 40 shorter due to the significant advances in the measurement technique.