Sensing surface states of Bi films by magnetotransport

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dc.identifier.uri http://dx.doi.org/10.15488/1917
dc.identifier.uri http://www.repo.uni-hannover.de/handle/123456789/1942
dc.contributor.author Lükermann, Daniel
dc.contributor.author Sologub, S.
dc.contributor.author Pfnür, Herbert
dc.contributor.author Tegenkamp, Christoph
dc.date.accessioned 2017-09-14T10:52:27Z
dc.date.available 2017-09-14T10:52:27Z
dc.date.issued 2011
dc.identifier.citation Lükermann, D.; Sologub, S.; Pfnür, H.; Tegenkamp, C.: Sensing surface states of Bi films by magnetotransport. In: Physical Review B - Condensed Matter and Materials Physics 83 (2011), Nr. 24, No. 245425. DOI: https://doi.org/10.1103/PhysRevB.83.245425
dc.description.abstract Macroscopic magnetotransport measurements at Bi films grown epitaxially on Si(111) substrates have been carried out at 10 K. The magnetoconductance curves reveal two characteristic regimes, which are assigned to magnetotransport by surface and bulk states, respectively. In contrast to bulk, backscattering, i.e., weak localization, is strongly restricted for the charge carriers in the spin-polarized surface bands, and a classical magnetoresistance behavior was found. While the surface-state conductivity was found to be as high as 4×10−4Ω−1/□, the bulk conductivity is extremely low, possibly due to quantum confinement of the bulk band structure. © 2011 American Physical Society. eng
dc.description.sponsorship DFG
dc.description.sponsorship DAAD
dc.language.iso eng
dc.publisher College Park, MD : American Physical Society
dc.relation.ispartofseries Physical Review B 83 (2011), Nr. 24
dc.rights Es gilt deutsches Urheberrecht. Das Dokument darf zum eigenen Gebrauch kostenfrei genutzt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.
dc.subject.ddc 530 | Physik ger
dc.title Sensing surface states of Bi films by magnetotransport
dc.type article
dc.type Text
dc.relation.issn 10980121
dc.relation.doi https://doi.org/10.1103/PhysRevB.83.245425
dc.bibliographicCitation.issue 24
dc.bibliographicCitation.volume 83
dc.bibliographicCitation.firstPage 245425
dc.description.version publishedVersion
tib.accessRights frei zug�nglich


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