Atomic size effects studied by transport in single silicide nanowires

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dc.identifier.uri http://dx.doi.org/10.15488/1880
dc.identifier.uri http://www.repo.uni-hannover.de/handle/123456789/1905
dc.contributor.author Miccoli, Ilio
dc.contributor.author Edler, Frederik
dc.contributor.author Pfnür, Herbert
dc.contributor.author Appelfeller, S.
dc.contributor.author Dähne, M.
dc.contributor.author Holtgrewe, K.
dc.contributor.author Sanna, S.
dc.contributor.author Schmidt, W.G.
dc.contributor.author Tegenkamp, Christoph
dc.date.accessioned 2017-09-14T07:14:17Z
dc.date.available 2017-09-14T07:14:17Z
dc.date.issued 2016
dc.identifier.citation Miccoli, I.; Edler, F.; Pfnür, H.; Appelfeller, S.; Dähne, M. et al.: Atomic size effects studied by transport in single silicide nanowires. In: Physical Review B 93 (2016), Nr. 12, No. 125412. DOI: https://doi.org/10.1103/PhysRevB.93.125412
dc.description.abstract Ultrathin metallic silicide nanowires with extremely high aspect ratios can be easily grown, e.g., by deposition of rare earth elements on semiconducting surfaces. These wires play a pivotal role in fundamental research and open intriguing perspectives for CMOS applications. However, the electronic properties of these one-dimensional systems are extremely sensitive to atomic-sized defects, which easily alter the transport characteristics. In this study, we characterized comprehensively TbSi2 wires grown on Si(100) and correlated details of the atomic structure with their electrical resistivities. Scanning tunneling microscopy (STM) as well as all transport experiments were performed in situ using a four-tip STM system. The measurements are complemented by local spectroscopy and density functional theory revealing that the silicide wires are electronically decoupled from the Si template. On the basis of a quasiclassical transport model, the size effect found for the resistivity is quantitatively explained in terms of bulk and surface transport channels considering details of atomic-scale roughness. Regarding future applications the full wealth of these robust nanostructures will emerge only if wires with truly atomically sharp interfaces can be reliably grown. © 2016 American Physical Society. eng
dc.description.sponsorship DFG/FOR/1700
dc.language.iso eng
dc.publisher College Park, MD : American Physical Society
dc.relation.ispartofseries Physical Review B 93 (2016), Nr. 12
dc.rights Es gilt deutsches Urheberrecht. Das Dokument darf zum eigenen Gebrauch kostenfrei genutzt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.
dc.subject.ddc 530 | Physik ger
dc.title Atomic size effects studied by transport in single silicide nanowires eng
dc.type article
dc.type Text
dc.relation.issn 24699950
dc.relation.doi https://doi.org/10.1103/PhysRevB.93.125412
dc.bibliographicCitation.issue 12
dc.bibliographicCitation.volume 93
dc.bibliographicCitation.firstPage 125412
dc.description.version publishedVersion
tib.accessRights frei zug�nglich


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