Murphy, J.D.; Al-Amin, M.; Bothe, K.; Olmo, M.; Voronkov, V.V.; Falster, R.J.
(College Park, MD : American Institute of Physics, 2015)
Supersaturated levels of interstitial oxygen in Czochralski silicon can lead to the formation of oxide precipitates. Although beneficial from an internal gettering perspective, oxygen-related extended defects give rise to ...