Modellierungskonzept für MOS Varaktoren zur Minimierung der AM-FM Konversion in VCOs [Modeling concept for MOS varactors for the minimization of the AM-FM conversion in VCOs]

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dc.identifier.uri http://dx.doi.org/10.15488/1431
dc.identifier.uri http://www.repo.uni-hannover.de/handle/123456789/1456
dc.contributor.author Peikert, T.
dc.contributor.author Bremer, J.-K.
dc.contributor.author Mathis, Wolfgang
dc.date.accessioned 2017-04-28T08:38:53Z
dc.date.available 2017-04-28T08:38:53Z
dc.date.issued 2010
dc.identifier.citation Peikert, T.; Bremer, J.-K.; Mathis, W.: Modellierungskonzept für MOS Varaktoren zur Minimierung der AM-FM Konversion in VCOs [Modeling concept for MOS varactors for the minimization of the AM-FM conversion in VCOs]. In: Advances in Radio Science 8 (2010), S. 143-149. DOI: https://doi.org/10.5194/ars-8-143-2010
dc.description.abstract In this work an analytical simulation model for MOS varactors, that can be used in a systematically VCO design flow, is presented. The simulation model is based on the EKV transistor model and includes only design and process parameters of the used CMOS technology. The proposed simulation model allows calculating the required design parameters and the effective large signal capacitance of the varactors incorporated into the VCO as a function of the output signal of the VCO. Based on the expression for the effective large signal capacitance it is possible to optimize the AMFM conversion behavior of the used varactors. The validity and accuracy of the simulation model is verified by Spectre simulations which are based on a 0.25 μm CMOS process (SGB25) from the company IHP and a 0.35 μm CMOS process (C35) from the company AMS. The simulation results show a good accordance in all transistor operating regions for NMOS varactors as well as PMOS varactors. eng
dc.description.abstract In dieser Arbeit wird ein analytisches Simulationsmodell für MOS Varaktoren zur Entwurfsunterstützung von integrierten CMOS LC-Tank VCO-Schaltungen präsentiert. Das analytische Simulationsmodell wurde auf Basis des EKV-Transistormodells implementiert und beinhaltet ausschließlich Design- und Prozessparameter für die Berechnung der Varaktorkapazität. Dieses Simulationsmodell ermöglicht es, die verwendeten Varaktoren im Vorfeld des VCO-Entwurfs zu dimensionieren, die effektive Großsignalkapazität in Abhängigkeit des Ausgangssignals zu berechnen und einzelne Eigenschaften der Varaktoren, wie z.B. das AM-FM Konversionsverhalten zu optimieren. Die Gültigkeit des vorgestellten analytischen Simulationsmodells zur Beschreibung der Varaktorkapazität in CMOS LC-Tank VCOs, wird anhand von Spectre (Cadence) Simulationen auf Basis eines 0.25 μm CMOS Prozesses der Firma IHP (SGB25) und eines 0.35 μm CMOS Prozesses der Firma AMS (C35) verifiziert. ger
dc.language.iso ger
dc.publisher Göttingen : Copernicus GmbH
dc.relation.ispartofseries Advances in Radio Science 8 (2010)
dc.rights CC BY 3.0
dc.rights.uri https://creativecommons.org/licenses/by/3.0/
dc.subject Analytical simulations eng
dc.subject Design parameters eng
dc.subject Large signal capacitance eng
dc.subject Modeling concepts eng
dc.subject Operating regions eng
dc.subject Process parameters eng
dc.subject Simulation model eng
dc.subject Spectre simulations eng
dc.subject Amplitude modulation eng
dc.subject Capacitance eng
dc.subject CMOS integrated circuits eng
dc.subject Design eng
dc.subject Varactors eng
dc.subject Variable frequency oscillators eng
dc.subject Computer simulation eng
dc.subject.ddc 621,3 | Elektrotechnik, Elektronik ger
dc.title Modellierungskonzept für MOS Varaktoren zur Minimierung der AM-FM Konversion in VCOs [Modeling concept for MOS varactors for the minimization of the AM-FM conversion in VCOs]
dc.type article
dc.type Text
dc.relation.issn 1684-9965
dc.relation.doi https://doi.org/10.5194/ars-8-143-2010
dc.bibliographicCitation.volume 8
dc.bibliographicCitation.firstPage 143
dc.bibliographicCitation.lastPage 149
dc.description.version publishedVersion
tib.accessRights frei zug�nglich


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