dc.identifier.uri |
http://dx.doi.org/10.15488/1347 |
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dc.identifier.uri |
http://www.repo.uni-hannover.de/handle/123456789/1372 |
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dc.contributor.author |
Veith, Boris
|
|
dc.contributor.author |
Dullweber, Thorsten
|
|
dc.contributor.author |
Siebert, M.
|
|
dc.contributor.author |
Kranz, Christopher
|
|
dc.contributor.author |
Werner, Florian
|
|
dc.contributor.author |
Harder, Nils-Peter
|
|
dc.contributor.author |
Schmidt, Jan
|
|
dc.contributor.author |
Roos, B.F.P.
|
|
dc.contributor.author |
Dippell, T.
|
|
dc.contributor.author |
Brendel, Rolf
|
|
dc.date.accessioned |
2017-04-21T08:38:42Z |
|
dc.date.available |
2017-04-21T08:38:42Z |
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dc.date.issued |
2012 |
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dc.identifier.citation |
Veith, B.; Dullweber, T.; Siebert, M.; Kranz, C.; Werner, F. et al.: Comparison of ICP-AlOx and ALD-Al2O3 layers for the rear surface passivation of c-Si solar cells. In: Energy Procedia 27 (2012), S. 379-384. DOI: https://doi.org/10.1016/j.egypro.2012.07.080 |
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dc.description.abstract |
The deposition rate of the standard (i.e. sequential) atomic layer deposition (ALD) process is very low compared to the plasma-enhanced chemical vapour deposition (PECVD) process. Therefore, as a short- and medium-term perspective, PECVD aluminium oxide (AlOx) films might be better suited for the implementation into industrial-type solar cells than ALD-Al 2O3 films. In this paper, we report results achieved with a newly developed PECVD deposition process for AlOx using an inductively coupled plasma (ICP). We compare the results to high-quality ALDAl2O3 films. We examine a stack consisting of a thin AlOx passivation layer and a PECVD silicon nitride (SiNy) capping layer. Surface recombination velocities below 9 cm/s were measured on low-resistivity (1.4 Ωcm) p-type crystalline silicon wafers passivated either by ICP-PECVD-AlOx films or by ALD-Al2O3 films after annealing at 425°C. Both passivation schemes provide an excellent thermal stability during firing at 910°C with SRVs below 12 cm/s for both, Al2O3/SiNy stacks and single Al 2O3 layers. A fixed negative charge of -4×10 12 cm-2 is measured for ICP-AlOx and ALD-Al2O3, whereas the interface state density is higher for the ICP-AlOx layer with values of 11.0×1011 eV-1cm-2 compared to 1.3×1011 eV -1cm-2 for ALD-Al2O3. Implemented into large-area screen-printed PERC solar cells, an independently confirmed efficiency of 20.1% for ICP-AlOx and an efficiency of 19.6% for ALD-Al2O3 are achieved. |
eng |
dc.description.sponsorship |
BMU/0325296 |
|
dc.description.sponsorship |
Solland Solar Cells BV |
|
dc.description.sponsorship |
SolarWorld Innovations GmbH |
|
dc.description.sponsorship |
SCHOTT Solar AG |
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dc.description.sponsorship |
RENA GmbH |
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dc.description.sponsorship |
SINGULUS TECHNOLOGIES AG |
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dc.language.iso |
eng |
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dc.publisher |
Amsterdam : Elsevier BV |
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dc.relation.ispartofseries |
Energy Procedia 27 (2012) |
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dc.rights |
CC BY-NC-ND 3.0 Unported |
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dc.rights.uri |
https://creativecommons.org/licenses/by-nc-nd/3.0/ |
|
dc.subject |
Aluminum oxide |
eng |
dc.subject |
Silicon |
eng |
dc.subject |
Solar Cells |
eng |
dc.subject |
Surface passivation |
eng |
dc.subject.classification |
Konferenzschrift |
ger |
dc.subject.ddc |
333,7 | Natürliche Ressourcen, Energie und Umwelt
|
ger |
dc.title |
Comparison of ICP-AlOx and ALD-Al2O3 layers for the rear surface passivation of c-Si solar cells |
eng |
dc.type |
Article |
|
dc.type |
Text |
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dc.relation.issn |
1876-6102 |
|
dc.relation.doi |
https://doi.org/10.1016/j.egypro.2012.07.080 |
|
dc.bibliographicCitation.volume |
27 |
|
dc.bibliographicCitation.firstPage |
379 |
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dc.bibliographicCitation.lastPage |
384 |
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dc.description.version |
publishedVersion |
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tib.accessRights |
frei zug�nglich |
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