Electrical Properties of Thin ZrSe3 Films for Device Applications

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dc.identifier.uri http://dx.doi.org/10.15488/13606
dc.identifier.uri https://www.repo.uni-hannover.de/handle/123456789/13716
dc.contributor.author Thole, Lars
dc.contributor.author Belke, Christopher
dc.contributor.author Locmelis, Sonja
dc.contributor.author Behrens, Peter
dc.contributor.author Haug, Rolf J.
dc.date.accessioned 2023-05-09T08:44:46Z
dc.date.available 2023-05-09T08:44:46Z
dc.date.issued 2022
dc.identifier.citation Thole, L.; Belke, C.; Locmelis, S.; Behrens, P.; Haug, R.J.: Electrical Properties of Thin ZrSe3 Films for Device Applications. In: ACS omega 7 (2022), Nr. 44, S. 39913-39916. DOI: https://doi.org/10.1021/acsomega.2c04198
dc.description.abstract Measurements of key properties of the two-dimensional transition metal trichalcogenide ZrSe3are reported. The bulk material was created by chemical vapor deposition and subsequently exfoliated to obtain thin films of varying thicknesses. The samples were then characterized by atomic force microscopy measurements and Raman spectroscopy and contacted by e-beam lithography. Electrical measurements give values for the band gap energy of 0.6 eV increasing for thinner samples. Transistor measurements show ZrSe3to be an n-type semiconductor. By looking at several samples with varying thicknesses, it was possible to determine a mean free path of 103 nm for the bulk material which opens the possibility for new electronic devices. eng
dc.language.iso eng
dc.publisher Washington, DC : ACS Publications
dc.relation.ispartofseries ACS omega 7 (2022), Nr. 44
dc.rights CC BY-NC-ND 4.0 Unported
dc.rights.uri https://creativecommons.org/licenses/by-nc-nd/4.0
dc.subject Electrical conductivity eng
dc.subject Materials eng
dc.subject Semiconductors eng
dc.subject Thickness eng
dc.subject Two dimensional materials eng
dc.subject.ddc 540 | Chemie ger
dc.subject.ddc 660 | Technische Chemie ger
dc.title Electrical Properties of Thin ZrSe3 Films for Device Applications eng
dc.type Article
dc.type Text
dc.relation.essn 2470-1343
dc.relation.issn 2470-1343
dc.relation.doi https://doi.org/10.1021/acsomega.2c04198
dc.bibliographicCitation.issue 44
dc.bibliographicCitation.volume 7
dc.bibliographicCitation.firstPage 39913
dc.bibliographicCitation.lastPage 39916
dc.description.version publishedVersion
tib.accessRights frei zug�nglich


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