A combined Statistical and TCAD Model as a method for understanding and reducing variations in multicrystalline Si solar cell production

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dc.identifier.uri http://dx.doi.org/10.15488/1338
dc.identifier.uri http://www.repo.uni-hannover.de/handle/123456789/1363
dc.contributor.author Fischer, G.
dc.contributor.author Müller, M.
dc.contributor.author Wagner, Hannes
dc.contributor.author Steingrube, S.
dc.contributor.author Altermatt, Pietro P.
dc.date.accessioned 2017-04-21T08:38:40Z
dc.date.available 2017-04-21T08:38:40Z
dc.date.issued 2012
dc.identifier.citation Fischer, G.; Müller, M.; Wagner, H.; Steingrube, S.; Altermatt, P.P.: A combined Statistical and TCAD Model as a method for understanding and reducing variations in multicrystalline Si solar cell production. In: Energy Procedia 27 (2012), S. 203-207. DOI: https://doi.org/10.1016/j.egypro.2012.07.052
dc.description.abstract Monitoring the I-V parameters in mass production yields a distribution that cannot be understood in a simple manner. For example, if Voc varies greatly, it is not obvious whether this is mainly due to variations in the bulk lifetime or in the surface passivation or due to other sources. In this work, we develop a method where statistics is combined with numerical device modeling to obtain a physical interpretation of the observed variations. In the first part, we derive a multivariate statistical model to extract the main influences of fabrication fluctuations on the I-V parameters. This statistical model is based on cell parameters measured on a representative sample of solar cells from production. In the second part, we develop a computer-aided design (TCAD) device simulation model for multicrystalline Si solar cells. This TCAD model quantifies the I-V variations on a physically sound basis. However, the number of simulations is grossly reduced by feeding in solely the main influences obtained from the statistical model. In the third part, we verify this method by comparing the calculated distribution with production data. This model is used for optimization strategies for higher cell efficiency, smaller variations in cell parameters and improved yield in mass production. Furthermore, we will apply our methodology to advanced cell concepts. It will allow the early consideration of production fluctuation in device simulation of advanced cell concepts, and therefore a realistic assessment of such concepts. eng
dc.description.sponsorship BMU/0325204
dc.language.iso eng
dc.publisher Amsterdam : Elsevier BV
dc.relation.ispartof 2nd International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2012, April 3-5, 2012, Leuven, Belgium
dc.relation.ispartofseries Energy Procedia 27 (2012)
dc.rights CC BY-NC-ND 3.0
dc.rights.uri https://creativecommons.org/licenses/by-nc-nd/3.0/
dc.subject Device simulation eng
dc.subject Multicrystalline silicon solar cells eng
dc.subject.ddc 333,7 | Natürliche Ressourcen, Energie und Umwelt ger
dc.title A combined Statistical and TCAD Model as a method for understanding and reducing variations in multicrystalline Si solar cell production
dc.type article
dc.type conferenceObject
dc.type Text
dc.relation.issn 1876-6102
dc.relation.doi https://doi.org/10.1016/j.egypro.2012.07.052
dc.bibliographicCitation.volume 27
dc.bibliographicCitation.firstPage 203
dc.bibliographicCitation.lastPage 207
dc.description.version publishedVersion
tib.accessRights frei zug�nglich


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