Frequency dependence of dielectrophoretic fabrication of single-walled carbon nanotube field-effect transistors

Originalpublikation

Sadabad, Y.A.; Khodadadian, A.; Istadeh, K.H.; Hedayati, M.; Kalantarinejad, R. et al.: Frequency dependence of dielectrophoretic fabrication of single-walled carbon nanotube field-effect transistors. In: Journal of Computational Electronics 19 (2020), Nr. 4, S. 1516-1526. DOI: https://doi.org/10.1007/s10825-020-01562-x

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Zusammenfassung:
A new theoretical model for the dielectrophoretic (DEP) fabrication of single-walled carbon nanotubes (SWCNTs) is presented. A different frequency interval for the alignment of wide-energy-gap semiconductor SWCNTs is obtained, exhibiting a considerable difference from the prevalent model. Two specific models are study, namely the spherical model and the ellipsoid model, to estimate the frequency interval. Then, the DEP process is performed and the obtained frequencies (from the spherical and ellipsoid models) are used to align the SWCNTs. These empirical results confirm the theoretical predictions, representing a crucial step towards the realization of carbon nanotube field-effect transistors (CNT-FETs) via the DEP process based on the ellipsoid model. © 2020, The Author(s).
Lizenzbestimmungen: CC BY 4.0 Unported - https://creativecommons.org/licenses/by/4.0/
Publikationstyp: Article
Publikationsstatus: publishedVersion
Erstveröffentlichung: 2020
Schlagwörter (englisch): Carbon nanotube field effect transistors, Dielectric devices, Fabrication, Nanosensors, Nanotubes, Transistors, Dielectrophoretic, Different frequency, Frequency dependence, Frequency intervals, Process-based, Single-walled carbon nanotube (SWCNTs), Spherical models, Theoretical modeling, Single-walled carbon nanotubes (SWCN), Dielectrophoresis, Ellipsoid model, Single-walled carbon nanotube, Spherical model
Fachliche Zuordnung (DDC): 004 | Informatik

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