Local droplet etching on InAlAs/InP surfaces with InAl droplets

Show simple item record

dc.identifier.uri http://dx.doi.org/10.15488/12475
dc.identifier.uri https://www.repo.uni-hannover.de/handle/123456789/12574
dc.contributor.author Cao, Xin
dc.contributor.author Zhang, Yiteng
dc.contributor.author Ma, Chenxi
dc.contributor.author Wang, Yinan
dc.contributor.author Brechtken, Benedikt
dc.contributor.author Haug, Rolf J.
dc.contributor.author Rugeramigabo, Eddy P.
dc.contributor.author Zopf, Michael
dc.contributor.author Ding, Fei
dc.date.accessioned 2022-07-12T08:07:22Z
dc.date.available 2022-07-12T08:07:22Z
dc.date.issued 2022
dc.identifier.citation Cao, X.; Zhang, Y.; Ma, C.; Wang, Y.; Brechtken, B. et al.: Local droplet etching on InAlAs/InP surfaces with InAl droplets. In: AIP Advances 12 (2022), Nr. 5, 055302. DOI: https://doi.org/10.1063/5.0088012
dc.description.abstract GaAs quantum dots (QDs) grown by local droplet etching (LDE) have been studied extensively in recent years. The LDE method allows for high crystallinity, as well as precise control of the density, morphology, and size of QDs. These properties make GaAs QDs an ideal candidate as single photon and entangled photon sources at short wavelengths (<800 nm). For technologically important telecom wavelengths, however, it is still unclear whether LDE grown QDs can be realized. Controlling the growth conditions does not enable shifting the wavelength of GaAs QDs to the telecom region. New recipes will have to be established. In this work, we study Indium–Aluminum (InAl) droplet etching on ultra-smooth In0.55Al0.45As surfaces on InP substrates, with a goal to lay the foundation for growing symmetrical and strain-free telecom QDs using the LDE method. We report that both droplets start to etch nanoholes at a substrate temperature above 415 °C, showing varying nanohole morphology and rapidly changing density (by more than one order of magnitude) at different temperatures. Al and In droplets are found to not intermix during etching, and instead etch nanoholes individually. The obtained nanoholes show a symmetric profile and very low densities, enabling infilling of lattice-matched InGaAs QDs on InxAl1−xAs/InP surfaces in further works. eng
dc.language.iso eng
dc.publisher New York, NY : American Inst. of Physics
dc.relation.ispartofseries AIP Advances 12 (2022), Nr. 5
dc.rights CC BY 4.0 Unported
dc.rights.uri https://creativecommons.org/licenses/by/4.0/
dc.subject Crystallinity eng
dc.subject Drops eng
dc.subject Etching eng
dc.subject Gallium arsenide eng
dc.subject III-V semiconductors eng
dc.subject.ddc 530 | Physik ger
dc.title Local droplet etching on InAlAs/InP surfaces with InAl droplets
dc.type Article
dc.type Text
dc.relation.essn 2158-3226
dc.relation.doi https://doi.org/10.1063/5.0088012
dc.bibliographicCitation.issue 5
dc.bibliographicCitation.volume 12
dc.bibliographicCitation.firstPage 055302
dc.description.version publishedVersion
tib.accessRights frei zug�nglich

Files in this item

This item appears in the following Collection(s):

Show simple item record


Search the repository


My Account

Usage Statistics