dc.identifier.uri |
http://dx.doi.org/10.15488/1194 |
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dc.identifier.uri |
http://www.repo.uni-hannover.de/handle/123456789/1218 |
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dc.contributor.author |
Reiter, Sina
|
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dc.contributor.author |
Koper, Nico
|
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dc.contributor.author |
Reineke-Koch, Rolf
|
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dc.contributor.author |
Larionova, Yevgeniya
|
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dc.contributor.author |
Turcu, Mircea
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dc.contributor.author |
Krügener, Jan
|
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dc.contributor.author |
Tetzlaff, Dominic
|
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dc.contributor.author |
Wietler, Tobias
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dc.contributor.author |
Höhne, Uwe
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dc.contributor.author |
Kähler, Jan-Dirk
|
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dc.contributor.author |
Brendel, Rolf
|
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dc.contributor.author |
Peibst, Robby
|
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dc.date.accessioned |
2017-03-17T10:51:49Z |
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dc.date.available |
2017-03-17T10:51:49Z |
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dc.date.issued |
2016 |
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dc.identifier.citation |
Reiter, S.; Koper, N.; Reineke-Koch, R.; Larionova, Y.; Turcu, M. et al.: Parasitic Absorption in Polycrystalline Si-layers for Carrier-selective Front Junctions. In: Energy Procedia 92 (2016), S. 199-204. DOI: https://doi.org/10.1016/j.egypro.2016.07.057 |
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dc.description.abstract |
We investigate the optical properties of n- and p-type polycrystalline silicon (poly-Si) layers. We determine the optical constants n and k of the complex refractive index of polycrystalline silicon by using variable-angle spectroscopic ellipsometry. Moreover, we investigate the effect of different doping levels in the poly-Si on free carrier absorption (FCA). Thereby, we demonstrate that the FCA in poly-Si can be described by a model developed for crystalline silicon (c-Si) at a first approximation. The optical properties of hydrogenated amorphous silicon layers (a-Si:H) are also investigated as a reference. With ray tracing simulations the absorption losses of poly-Si and of the a-Si:H layers are quantified with respect to the film thickness. Based on this approach we find that the short-circuit current density losses due to parasitic absorption of poly-Si layers are significantly lower when compared to a-Si:H layers of the same thickness. For example the short-circuit current density loss due to a 20 nm thick p-type poly-Si layer is around 1.1 mA/cm2, whereas a 20 nm thick p-type a-Si:H layer leads to a loss of around 3.5 mA/cm2. |
eng |
dc.description.sponsorship |
BMWi/0325702 |
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dc.language.iso |
eng |
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dc.publisher |
London : Elsevier Ltd. |
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dc.relation.ispartofseries |
Energy Procedia 92 (2016) |
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dc.rights |
CC BY-NC-ND 4.0 Unported |
|
dc.rights.uri |
https://creativecommons.org/licenses/by-nc-nd/4.0/ |
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dc.subject |
front junction |
eng |
dc.subject |
optical properties |
eng |
dc.subject |
Polycrystalline silicon |
eng |
dc.subject |
ray tracing simulations |
eng |
dc.subject |
Amorphous materials |
eng |
dc.subject |
Crystalline materials |
eng |
dc.subject |
Optical properties |
eng |
dc.subject |
Polycrystalline materials |
eng |
dc.subject |
Polysilicon |
eng |
dc.subject |
Refractive index |
eng |
dc.subject |
Semiconductor doping |
eng |
dc.subject |
Silicon |
eng |
dc.subject |
Spectroscopic ellipsometry |
eng |
dc.subject |
Complex refractive index |
eng |
dc.subject |
Crystalline silicons |
eng |
dc.subject |
Free carrier absorption |
eng |
dc.subject |
Polycrystalline silicon (poly-Si) |
eng |
dc.subject |
Polycrystalline-Si |
eng |
dc.subject |
Ray tracing simulation |
eng |
dc.subject |
Variable angle spectroscopic ellipsometry |
eng |
dc.subject |
Amorphous silicon |
eng |
dc.subject.classification |
Konferenzschrift |
ger |
dc.subject.ddc |
530 | Physik
|
ger |
dc.title |
Parasitic Absorption in Polycrystalline Si-layers for Carrier-selective Front Junctions |
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dc.type |
Article |
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dc.type |
Text |
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dc.relation.issn |
1876-6102 |
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dc.relation.doi |
https://doi.org/10.1016/j.egypro.2016.07.057 |
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dc.bibliographicCitation.volume |
92 |
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dc.bibliographicCitation.firstPage |
199 |
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dc.bibliographicCitation.lastPage |
204 |
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tib.accessRights |
frei zug�nglich |
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