dc.identifier.uri |
http://dx.doi.org/10.15488/1193 |
|
dc.identifier.uri |
http://www.repo.uni-hannover.de/handle/123456789/1217 |
|
dc.contributor.author |
Rienäcker, Michael
|
|
dc.contributor.author |
Merkle, Agnes
|
|
dc.contributor.author |
Römer, Udo
|
|
dc.contributor.author |
Kohlenberg, Heike
|
|
dc.contributor.author |
Krügener, Jan
|
|
dc.contributor.author |
Brendel, Rolf
|
|
dc.contributor.author |
Peibst, Robby
|
|
dc.date.accessioned |
2017-03-17T10:51:48Z |
|
dc.date.available |
2017-03-17T10:51:48Z |
|
dc.date.issued |
2016 |
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dc.identifier.citation |
Rienäcker, M.; Merkle, A.; Römer, U.; Kohlenberg, H.; Krügener, J. et al.: Recombination Behavior of Photolithography-free Back Junction Back Contact Solar Cells with Carrier-selective Polysilicon on Oxide Junctions for Both Polarities. In: Energy Procedia 92 (2016), S. 412-418. DOI: https://doi.org/10.1016/j.egypro.2016.07.121 |
|
dc.description.abstract |
We report on ion-implanted, inkjet patterned back junction back contact silicon solar cells with POLysilicon on Oxide (POLO) junctions for both polarities – n+ doped BSF and p+ doped emitter. The recombination behavior is investigated at two different processing stages: before and after trench separation of p+ and n+ regions within polysilicon (poly-Si). Before trench separation, we find a systematic dependence of the recombination behavior on the BSF index, i.e. the p+n+-junction meander length in the poly-Si. Obviously, recombination at the p+n+-junction in the poly-Si limits the implied open circuit voltage Voc,impl. at one sun illumination and the implied pseudo fill factor pFFimpl. to 695 mV and 80%, respectively. After trench isolation, however, Voc,impl (pFFimpl.) values increase up to 730 mV (85.5%), corresponding to a pseudo-efficiency of 26.2% for an assumed short circuit current density Jsc of 42 mA/cm2. We demonstrate a photolithography-free back junction back contacted solar cell with p-type and n-type POLO junctions with an in-house measured champion efficiency of 23.9% on a designated area of 3.97 cm2. This efficiency is mainly limited by the imperfect passivation in the undoped trench regions and at the undoped front side. |
eng |
dc.description.sponsorship |
EU/FP7/608498 |
|
dc.language.iso |
eng |
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dc.publisher |
London : Elsevier Ltd. |
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dc.relation.ispartofseries |
Energy Procedia 92 (2016) |
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dc.rights |
CC BY-NC-ND 4.0 Unported |
|
dc.rights.uri |
https://creativecommons.org/licenses/by-nc-nd/4.0/ |
|
dc.subject |
back junction back contact solar cell |
eng |
dc.subject |
pn junction |
eng |
dc.subject |
POLO |
eng |
dc.subject |
polysilicon on oxide junctions |
eng |
dc.subject |
recombination |
eng |
dc.subject |
trench isolation |
eng |
dc.subject |
Crystalline materials |
eng |
dc.subject |
Efficiency |
eng |
dc.subject |
Ion implantation |
eng |
dc.subject |
Open circuit voltage |
eng |
dc.subject |
Photolithography |
eng |
dc.subject |
Polycrystalline materials |
eng |
dc.subject |
Polysilicon |
eng |
dc.subject |
Silicon |
eng |
dc.subject |
Solar cells |
eng |
dc.subject |
Back contact |
eng |
dc.subject |
Oxide junction |
eng |
dc.subject |
Trench isolation |
eng |
dc.subject |
Silicon solar cells |
eng |
dc.subject.classification |
Konferenzschrift |
ger |
dc.subject.ddc |
530 | Physik
|
ger |
dc.title |
Recombination Behavior of Photolithography-free Back Junction Back Contact Solar Cells with Carrier-selective Polysilicon on Oxide Junctions for Both Polarities |
|
dc.type |
Article |
|
dc.type |
Text |
|
dc.relation.issn |
1876-6102 |
|
dc.relation.doi |
https://doi.org/10.1016/j.egypro.2016.07.121 |
|
dc.bibliographicCitation.volume |
92 |
|
dc.bibliographicCitation.firstPage |
412 |
|
dc.bibliographicCitation.lastPage |
418 |
|
tib.accessRights |
frei zug�nglich |
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