dc.identifier.uri |
http://dx.doi.org/10.15488/1156 |
|
dc.identifier.uri |
http://www.repo.uni-hannover.de/handle/123456789/1180 |
|
dc.contributor.author |
Müller, Jens
|
|
dc.contributor.author |
Bothe, Karsten
|
|
dc.contributor.author |
Gatz, Sebastian
|
|
dc.contributor.author |
Plagwitz, Heiko
|
|
dc.contributor.author |
Schubert, Gunnar
|
|
dc.contributor.author |
Brendel, Rolf
|
|
dc.date.accessioned |
2017-02-23T13:12:54Z |
|
dc.date.available |
2017-02-23T13:12:54Z |
|
dc.date.issued |
2011 |
|
dc.identifier.citation |
Müller, J.; Bothe, K.; Gatz, S.; Plagwitz, H.; Schubert, G. et al.: Recombination at local aluminum-alloyed silicon solar cell base contacts by dynamic infrared lifetime mapping. In: Energy Procedia 8 (2011), S. 337-342. DOI: https://doi.org/10.1016/j.egypro.2011.06.146 |
|
dc.description.abstract |
The application of local aluminum (Al)-alloyed contacts to the p-type base of silicon solar cells reduces minority charge carrier recombination due to the formation of a local back surface field (LBSF). We study the recombination properties and formation of base contacts, which are realized by local laser ablation of a dielectric stack (laser contact opening - LCO) and subsequent full area screen printing of Al paste. Based on charge carrier lifetime measurements using the camera-based and calibration-free dynamic infrared lifetime mapping (ILM) technique, we determine contact recombination velocities at the contacts as low as Scont = 65 cm/s on 200 Ωcm float-zone silicon (FZ-Si) and corresponding reverse saturation current densities of J0,cont = 900 fA/cm2 on 1.5 Ωcm FZ-Si. As a result we show that local contact geometries with point contact radii r > 100 μm and line contact widths a > 80 μm are appropriate for lowest contact recombination employing local Al alloyed contacts. Furthermore, complete and high quality laser ablation of the dielectric stack is necessary for the formation of a sufficiently thick LBSF. |
eng |
dc.language.iso |
eng |
|
dc.publisher |
Amsterdam : Elsevier BV |
|
dc.relation.ispartofseries |
Energy Procedia 8 (2011) |
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dc.rights |
CC BY-NC-ND 3.0 Unported |
|
dc.rights.uri |
https://creativecommons.org/licenses/by-nc-nd/3.0/ |
|
dc.subject |
Carrier lifetime |
eng |
dc.subject |
Laser ablation |
eng |
dc.subject |
Local back surface field |
eng |
dc.subject |
Silicon solar cells |
eng |
dc.subject |
Back surface fields |
eng |
dc.subject |
Charge carrier recombination |
eng |
dc.subject |
Contact geometry |
eng |
dc.subject |
Contact opening |
eng |
dc.subject |
Dielectric stack |
eng |
dc.subject |
Float zone silicon |
eng |
dc.subject |
High quality |
eng |
dc.subject |
Lifetime mapping |
eng |
dc.subject |
Line contact |
eng |
dc.subject |
P-type |
eng |
dc.subject |
Recombination velocity |
eng |
dc.subject |
Reverse-saturation currents |
eng |
dc.subject |
Ablation |
eng |
dc.subject |
Aluminum |
eng |
dc.subject |
Carrier lifetime |
eng |
dc.subject |
Crystalline materials |
eng |
dc.subject |
Laser ablation |
eng |
dc.subject |
Laser applications |
eng |
dc.subject |
Photovoltaic effects |
eng |
dc.subject |
Silicon solar cells |
eng |
dc.subject |
Aluminum alloys |
eng |
dc.subject.classification |
Konferenzschrift |
ger |
dc.subject.ddc |
530 | Physik
|
ger |
dc.title |
Recombination at local aluminum-alloyed silicon solar cell base contacts by dynamic infrared lifetime mapping |
|
dc.type |
Article |
|
dc.type |
Text |
|
dc.relation.issn |
1876-6102 |
|
dc.relation.doi |
https://doi.org/10.1016/j.egypro.2011.06.146 |
|
dc.bibliographicCitation.volume |
8 |
|
dc.bibliographicCitation.firstPage |
337 |
|
dc.bibliographicCitation.lastPage |
342 |
|
dc.description.version |
publishedVersion |
|
tib.accessRights |
frei zug�nglich |
|