dc.identifier.uri |
http://dx.doi.org/10.15488/1150 |
|
dc.identifier.uri |
http://www.repo.uni-hannover.de/handle/123456789/1174 |
|
dc.contributor.author |
Veith, Boris
|
|
dc.contributor.author |
Werner, Florian
|
|
dc.contributor.author |
Zielke, Dimitri
|
|
dc.contributor.author |
Brendel, Rolf
|
|
dc.contributor.author |
Schmidt, Jan
|
|
dc.date.accessioned |
2017-02-23T13:12:48Z |
|
dc.date.available |
2017-02-23T13:12:48Z |
|
dc.date.issued |
2011 |
|
dc.identifier.citation |
Veith, B.; Werner, F.; Zielke, D.; Brendel, Rolf; Schmidt, Jan: Comparison of the thermal stability of single Al2O3 layers and Al2O3/SiNx stacks for the surface passiviation of silicon. In: Energy Procedia 8 (2011), S. 307-312. DOI: https://doi.org/10.1016/j.egypro.2011.06.141 |
|
dc.description.abstract |
We measure surface recombination velocities (SRVs) below 10 cm/s on low-resistivity (1.4 Ωcm) p-type crystalline silicon wafers passivated with plasma-assisted and thermal atomic layer deposited (ALD) aluminium oxide (Al2O3) films. Ultrathin Al2O3 films (< 5 nm) are particularly relevant for the implementation into solar cells, as the deposition rate of the ALD process is very low compared to e.g. plasma-enhanced chemical vapor deposition (PECVD). Hence, we examine the passivation quality of a stack consisting of an ultrathin Al2O 3 passivation layer deposited by ALD and a SiNx capping layer deposited by PECVD. Our experiments show a substantial improvement of the thermal stability during firing at 810°C for the Al2O 3/SiNx stacks compared to a single Al2O 3 layer. We report on a 'regeneration effect' observed for Al 2O3 single layers after firing, where the degraded passivation is significantly improved after annealing at 400°C and also by illumination at room temperature using a halogen lamp. Nevertheless, for Al 2O3/SiNx stacks we measure SRVs < 15 cm/s after firing, whereas for Al2O3 single layers the regenerated SRVs are in the range of 10-30 cm/s. Al2O 3/SiNx stacks are hence ideally suited for the implementation into industrial-type silicon solar cells, although 'regenerated' Al2O3 single layers should result in a comparable cell performance. |
eng |
dc.description.sponsorship |
State of Lower Saxony |
|
dc.description.sponsorship |
German Ministry for the Environment, Nature Conservation and Nuclear Safety (BMU)/0325050 |
|
dc.language.iso |
eng |
|
dc.publisher |
Amsterdam : Elsevier BV |
|
dc.relation.ispartofseries |
Energy Procedia 8 (2011) |
|
dc.rights |
CC BY-NC-ND 3.0 Unported |
|
dc.rights.uri |
https://creativecommons.org/licenses/by-nc-nd/3.0/ |
|
dc.subject |
Aluminum oxide |
eng |
dc.subject |
Silicon |
eng |
dc.subject |
Solar cells |
eng |
dc.subject |
Surface passivation |
eng |
dc.subject |
Aluminium oxide |
eng |
dc.subject |
Aluminum oxides |
eng |
dc.subject |
Atomic layer deposited |
eng |
dc.subject |
Capping layer |
eng |
dc.subject |
Cell performance |
eng |
dc.subject |
Crystalline silicon wafers |
eng |
dc.subject |
Halogen lamps |
eng |
dc.subject |
P-type |
eng |
dc.subject |
Passivation layer |
eng |
dc.subject |
Room temperature |
eng |
dc.subject |
Single layer |
eng |
dc.subject |
Surface passivation |
eng |
dc.subject |
Surface recombination velocities |
eng |
dc.subject |
Ultra-thin |
eng |
dc.subject |
Chemical vapor deposition |
eng |
dc.subject |
Crystalline materials |
eng |
dc.subject |
Oxide films |
eng |
dc.subject |
Oxides |
eng |
dc.subject |
Passivation |
eng |
dc.subject |
Photovoltaic effects |
eng |
dc.subject |
Plasma deposition |
eng |
dc.subject |
Plasma enhanced chemical vapor deposition |
eng |
dc.subject |
Semiconducting silicon compounds |
eng |
dc.subject |
Silicon nitride |
eng |
dc.subject |
Silicon wafers |
eng |
dc.subject |
Thermodynamic stability |
eng |
dc.subject |
Ultrathin films |
eng |
dc.subject |
Aluminum |
eng |
dc.subject.classification |
Konferenzschrift |
ger |
dc.subject.ddc |
530 | Physik
|
ger |
dc.title |
Comparison of the thermal stability of single Al2O3 layers and Al2O3/SiNx stacks for the surface passiviation of silicon |
eng |
dc.type |
Article |
|
dc.type |
Text |
|
dc.relation.issn |
1876-6102 |
|
dc.relation.doi |
https://doi.org/10.1016/j.egypro.2011.06.141 |
|
dc.bibliographicCitation.volume |
8 |
|
dc.bibliographicCitation.firstPage |
307 |
|
dc.bibliographicCitation.lastPage |
312 |
|
dc.description.version |
publishedVersion |
|
tib.accessRights |
frei zug�nglich |
|