Metal semiconductor metal photodiodes based on all-epitaxial Ge-on-insulator-on-Si(111), grown by molecular beam epitaxy

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dc.identifier.uri http://dx.doi.org/10.15488/10267
dc.identifier.uri https://www.repo.uni-hannover.de/handle/123456789/10340
dc.contributor.author Pokharia, R.S.
dc.contributor.author Khiangte, K.R.
dc.contributor.author Rathore, J.S.
dc.contributor.author Schmidt, J.
dc.contributor.author Osten, H.J.
dc.contributor.author Laha, A.
dc.contributor.author Mahapatra, S.
dc.date.accessioned 2020-12-08T15:27:05Z
dc.date.available 2020-12-08T15:27:05Z
dc.date.issued 2019
dc.identifier.citation Pokharia, R.S.; Khiangte, K.R.; Rathore, J.S.; Schmidt, J.; Osten, H.J. et al.: Metal semiconductor metal photodiodes based on all-epitaxial Ge-on-insulator-on-Si(111), grown by molecular beam epitaxy. In: Proceedings of SPIE 10914 (2019), 1091417. DOI: https://doi.org/10.1117/12.2509720
dc.description.abstract We report on the fabrication and characterisation of an all-epitaxial Germanium-on-Insulator (GOI) Metal-Semiconductor-Metal (MSM) photodetector. The MSM photodetector is fabricated on a (111)-oriented epitaxial Ge layer, grown on an epitaxial Gd 2 O 3 /Si(111) substrate, by molecular beam epitaxy (MBE). The first step is the growth of the 15-nm thick Gd 2 O 3 epitaxial layer over CMOS-grade silicon, atop which an epitaxial layer of Ge is grown. Near infrared (NIR) MSM photodetectors have been fabricated over the Ge epitaxial layer with an inter-digitated (IDT) contact structure, with an active area of 100 μm x 124 μm. For the particular IDT dimensions, the dark current has been measured to be 475 μA. A responsivity of ∼ 2 mA/W is observed at a-5V bias, when excited at 1550 nm. © 2019 SPIE. eng
dc.language.iso eng
dc.publisher Bellingham : SPIE
dc.relation.ispartofseries Proceedings of SPIE 10914 (2019)
dc.rights Es gilt deutsches Urheberrecht. Das Dokument darf zum eigenen Gebrauch kostenfrei genutzt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden. Dieser Beitrag ist aufgrund einer (DFG-geförderten) Allianz- bzw. Nationallizenz frei zugänglich.
dc.subject Germanium eng
dc.subject Germanium-on-insulator eng
dc.subject Molecular beam epitaxy eng
dc.subject MSM photodiodes eng
dc.subject NIR photodetector eng
dc.subject Silicon photonics eng
dc.subject.ddc 620 | Ingenieurwissenschaften und Maschinenbau ger
dc.title Metal semiconductor metal photodiodes based on all-epitaxial Ge-on-insulator-on-Si(111), grown by molecular beam epitaxy eng
dc.type conferenceObject
dc.type article
dc.type Text
dc.relation.doi https://doi.org/10.1117/12.2509720
dc.bibliographicCitation.volume 10914
dc.bibliographicCitation.firstPage 1091417
dc.description.version publishedVersion
tib.accessRights frei zug�nglich


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