Zusammenfassung: |
We investigate process sequences for obtaining solderable Al/Ni:V/Ag contacts to PERC-type crystalline Si solar cells by in-line Al evaporation. For a high cell efficiency the evaporated aluminum must be annealed at 350 °C for about 5 min. We find that annealing the Al/Ni:V/Ag metallization stack at temperatures above 150 °C destroys the solderability of the wetting layer. A solution for this problem is to first deposit the 2.5 μm Al layer by evaporation, then anneal the cell at 350 °C for 10 min, and finally sputter a double layer of Ni:V/Ag with respective thickness values of 200 nm and 25 nm. This process leads to a contact resistivity lower than 1 mΩcm2. The solderablility is proven by a peel force greater than 3 N/mm. We present a solderable PERC cell with Al/Ni:V/Ag rear side metallization and an efficiency of 18.9%.
|
Lizenzbestimmungen: |
CC BY-NC-ND 3.0 Unported - https://creativecommons.org/licenses/by-nc-nd/3.0/
|
Publikationstyp: |
Article |
Publikationsstatus: |
publishedVersion |
Erstveröffentlichung: |
2013 |
Schlagwörter (englisch): |
Evaporated aluminum, Metallization, Silicon solar cell, Solderability
|
Fachliche Zuordnung (DDC): |
600 | Technik, 530 | Physik
|
Kontrollierte Schlagwörter: |
Konferenzschrift
|