Growth mechanism for alternating supply epitaxy

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Wang, Li; Dimitrijev, Sima; Fissel, Andreas; Walker, Glenn; Chai, Jessica et al.: Growth mechanism for alternating supply epitaxy. In: RSC Advances 6 (2016), Nr. 20, S. 16662-16667. DOI: http://dx.doi.org/10.1039/C5RA24797G

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Abstract: 
Low-cost large-diameter cubic silicon carbide (3C-SiC) film grown on silicon (Si) has been demonstrated to have a wide range of applications in photonics, electronics, photoelectrochemistry and micro-electro-mechanical system technologies. In this paper, the epitaxial growth of SiC on Si by low-pressure chemical vapour deposition is investigated. Two modes were employed to supply the precursors: the alternating supply and the simultaneous supply. Compared with SiC films grown at the same temperature by simultaneous supply epitaxy method, the SiC grown by alternating supply epitaxy (ASE) method has better crystallinity, smoother surface, and better thickness uniformity as confirmed by X-ray diffraction and atomic force microscopy characterisation. We propose the growth mechanism for ASE growth of 3C-SiC and validate it in detail experimentally. It is found that, Si deposition on SiC follows either Stranski–Krastanov mode or island growth mode, while SiC formation proceeds in two possible reaction paths: redistributing of the formed Si islands or smoothing of the formed SiC islands by decomposition migration process. Both reaction paths are driven by minimizing the surface free energy and reducing dangling bonds density. In summary, the key features of ASE are: (1) Si has a longer diffusion length and thus higher probability to adhere to a crystallographically favourable position; (2) undesirable gas phase reactions can be avoided. The obtained results indicate that ASE is a unique and economically viable method to prepare uniform 3C-SiC on multiple large-diameter Si wafers.
License of this version: Es gilt deutsches Urheberrecht. Das Dokument darf zum eigenen Gebrauch kostenfrei genutzt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden. Dieser Beitrag ist aufgrund einer (DFG-geförderten) Allianz- bzw. Nationallizenz frei zugänglich.
Document Type: article
Publishing status: publishedVersion
Issue Date: 2016
Appears in Collections:Naturwissenschaftliche Fakultät

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pos. country downloads
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1 image of flag of Germany Germany 288 91.43%
2 image of flag of China China 9 2.86%
3 image of flag of United States United States 5 1.59%
4 image of flag of No geo information available No geo information available 4 1.27%
5 image of flag of France France 2 0.63%
6 image of flag of Austria Austria 2 0.63%
7 image of flag of Pakistan Pakistan 1 0.32%
8 image of flag of Belgium Belgium 1 0.32%
9 image of flag of Australia Australia 1 0.32%
10 image of flag of Armenia Armenia 1 0.32%
    other countries 1 0.32%

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