Many nonlinear electronic circuits showing fast switching behavior exhibit jump effects which occurs when the state space of the electronic system contains a fold. This leads to difficulties during the simulation of these systems with standard circuit simulators. A method to overcome these problems is by regularization, where parasitic inductors and capacitors are added at the suitable locations. However, the transient solution will not be reliable if this regularization is not done in accordance with Tikhonov's Theorem. A geometric approach is taken to overcome these problems by explicitly computing the state space and jump points of the circuit. Until now, work has been done in analyzing example circuits exhibiting this behavior for BJT transistors. In this work we apply these methods to MOS circuits (Schmitt trigger, flip flop and multivibrator) and present the numerical results. To analyze the circuits we use the EKV drain current model as equivalent circuit model for the MOS transistors.