Ni:Si as barrier material for a solderable PVD metallization of silicon solar cells

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Jung, V.; Heinemeyer, F.; Köntges, M.; Brendel, R.: Ni:Si as barrier material for a solderable PVD metallization of silicon solar cells. In: Energy Procedia 38 (2013), S. 362-367. DOI:

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Sum total of downloads: 55

We study Ni:Si as a barrier material for the PVD metallization of silicon solar cells and investigate the long term solderability of Al/Ni:Si/Ag metal stacks in terms of peel forces and contact resistances. For this purpose, solar cell connectors are soldered on the Al/Ni:Si/Ag stacks in three different aging states: directly after metallization, after accelerated storage and after storage for six months. The thickness of the Ni:Si layer is varied in these tests. Furthermore we measure the contact resistance between cell interconnect ribbons and the test stack. To assess possible contamination of the Si by the metals we measure the effective lifetime of electron hole pairs during a regularly interrupted thermal treatment procedure. The samples with 200 nm or thicker Ni:Si layers soldered with the lead-containing solder and the flux 952S perform best and pass all tests.
License of this version: CC BY-NC-ND 3.0 Unported
Document Type: Article
Publishing status: publishedVersion
Issue Date: 2013
Appears in Collections:An-Institute

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pos. country downloads
total perc.
1 image of flag of Germany Germany 29 52.73%
2 image of flag of China China 10 18.18%
3 image of flag of United States United States 6 10.91%
4 image of flag of Vietnam Vietnam 2 3.64%
5 image of flag of France France 2 3.64%
6 image of flag of No geo information available No geo information available 1 1.82%
7 image of flag of Taiwan Taiwan 1 1.82%
8 image of flag of Israel Israel 1 1.82%
9 image of flag of Czech Republic Czech Republic 1 1.82%
10 image of flag of Switzerland Switzerland 1 1.82%
    other countries 1 1.82%

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