Competitive gettering of iron in silicon photovoltaics: Oxide precipitates versus phosphorus diffusion

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Murphy, J.D.; McGuire, R.E.; Bothe, K.; Voronkov, V.V.; Falster, R.J.: Competitive gettering of iron in silicon photovoltaics: Oxide precipitates versus phosphorus diffusion. In: Journal of Applied Physics 116 (2014), Nr. 5, 53514. DOI: https://doi.org/10.1063/1.4892015

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Experiments have been conducted to understand the behaviour of iron in silicon containing oxide precipitates and associated defects (dislocations and stacking faults), which is subjected to phosphorus diffusion gettering. Injection-dependent minority carrier lifetime measurements are analysed to provide quantitative information on the degree to which the precipitates and associated defects are decorated with iron impurities. These data are correlated with bulk iron measurements based on the photodissociation of FeB pairs. Iron in the vicinity of oxide precipitates in samples with relatively low levels of bulk iron contamination (< 5 × 1012 cm−3) can be gettered to some extent. Higher levels of bulk iron contamination (> 1.2 × 1013 cm−3) result in irreversible behaviour, suggesting iron precipitation in the vicinity of oxide precipitates. Bulk iron is preferentially gettered to the phosphorus diffused layer opposed to the oxide precipitates and associated defects.
License of this version: CC BY 3.0 Unported
Document Type: Article
Publishing status: publishedVersion
Issue Date: 2014
Appears in Collections:An-Institute

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1 image of flag of Germany Germany 21 46.67%
2 image of flag of United States United States 9 20.00%
3 image of flag of China China 4 8.89%
4 image of flag of Taiwan Taiwan 2 4.44%
5 image of flag of India India 2 4.44%
6 image of flag of France France 2 4.44%
7 image of flag of Vietnam Vietnam 1 2.22%
8 image of flag of No geo information available No geo information available 1 2.22%
9 image of flag of Iran, Islamic Republic of Iran, Islamic Republic of 1 2.22%
10 image of flag of Czech Republic Czech Republic 1 2.22%
    other countries 1 2.22%

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